Method for rolling grinding of ground surface of single crystal silicon

Abstract

The invention provides a method for the rolling grinding of the ground surface of single crystal silicon. The method comprises the following steps of: oppositely arranging a pair of cup-shaped grinding wheels along transverse axes so as to form an outer-ring grinding space and an inner-ring grinding space between the two cup-shaped grinding wheels; longitudinally arranging the single crystal silicon so as to make the surface to be rolling-ground surface vertical to the transverse axes of the cup-shaped grinding wheels; and when the two cup-shaped grinding wheels rotate around the transverse axes, driving the single crystal silicon to rotate around a longitudinal axis, and transferring the single crystal silicon to the outer-ring grinding space for rolling grinding. Due to the design, the method has the advantages of overcoming the defect existing in the prior art that the round grinding of the single crystal silicon is difficult to control, ensuring the accurate grinding size of the single crystal silicon and improving the quality of the single crystal silicon.

Description

technical field [0001] The invention relates to a silicon material grinding technology, in particular to a single crystal silicon grinding surface rolling grinding method. Background technique [0002] With the depletion of non-renewable energy, the development of renewable energy is gradually being valued by people. Solar energy, as an unlimited energy and clean energy, naturally becomes the top priority in the field of new energy. For this reason, people have invested a lot in this field. Human and material resources are used for research and development, and at the same time, it promotes the development of related industries, for example, the production and processing of silicon materials as raw materials for solar cells. [0003] A solar cell is composed of many solar silicon wafers bonded to a metal plate coated with an anti-corrosion conductive layer with conductive adhesive, and directly converts light energy into electrical energy through the photoelectric effect or ...

AI Technical Summary

Problems solved by technology

[0005] Since the four faces and four arc surfaces of the single crystal silicon rod need to be ground, in the existing processing technology, the usual practice is to place the single crystal silicon rod on two relatively parallel grinding wheels. Double-sided grinding is carried out between them. Since this method can only grind two sides of the single crystal silicon rod at a time, if all four sides are ground, two operations are required, which is time-consuming and labor-intensive; Furthermore, when grinding the four arc surfaces of the single crystal silicon rod, the grinding wheel needs to be rotated at high speed around the axis of the single crystal silicon rod, and then the single crystal silicon rod is placed in the rotating Grinding of four arc surfaces is carried out between the grinding wheels. Since the quality of the grinding wheel is relatively heavy and the angular velocity of rotation is relatively large, it is difficult to control the rotation. A slight deviation will affect the grinding performance of the single crystal silicon rod. Accuracy, which in turn affects the quality of the monocrystalline silicon rod

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