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ZnO nanosphere-based GaN-based light emitting diode surface roughening method

A technology of light-emitting diodes and surface roughening, which is applied to electrical components, circuits, semiconductor devices, etc., can solve the problems of reduced light-emitting area, reduced luminous efficiency, and unstable process. It is easy to achieve size, improve extraction efficiency, and simple process Effect

Inactive Publication Date: 2010-06-16
HC SEMITEK CORP
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Problems solved by technology

The second is to improve the light extraction efficiency of the device. The surface of ordinary GaN-based LEDs is planar, and the refractive index of GaN and air is very different. The critical angle of total reflection at the interface between GaN and air is 25 degrees, and the light generated in the quantum well is only A very small fraction can be emitted into the air, resulting in an external quantum efficiency of only a few percent
However, accompanied by the deterioration of the surface quality, the crystalline quality of the sample is significantly reduced, which will affect the optoelectronic properties of the device material and reduce the reliability of the LED.
In addition, the roughness of the sample surface is controlled by adjusting the growth parameters, which is also very unstable in the process.
[0006] 2. It is realized by etching on the crystal surface, but it is not suitable for gallium nitride series materials, because gallium nitride series materials have strong acid and alkali resistance characteristics, and it is not easy to control during wet etching
Although dry etching can overcome the aforementioned wet etching problem, it is easy to cause damage to the crystal.
Moreover, the p-type gallium nitride graft layer is usually deposited in a very thin thickness (0.1-0.3um). If the p-type gallium nitride layer is directly roughened, the light-emitting layer may be damaged, resulting in the disadvantage of reducing the light-emitting area.
[0007] 3. For example, the patent application number 200680030998.3 uses photo-assisted electrochemical corrosion (PEC) to roughen the transparent electrode on gallium nitride. This method is relatively complicated
Moreover, in order to obtain a relatively rough surface, the transparent electrode must be relatively thick, and the light transmittance will be deteriorated, reducing the luminous efficiency.

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Embodiment Construction

[0028] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0029] figure 2 Marking description in: 1-P pad, 2-transparent P-type electrode, 3-P-type GaN material, 4-quantum well, 5-N-type GaN material, 6-substrate, 7-nanometer ZnO roughening layer , 8-N pressure solder joints.

[0030] The GaN-based light-emitting diode whose surface is roughened with ZnO nanospheres sequentially includes: a substrate, a GaN-based epitaxial layer, a transparent electrode on a P-type material for ohmic contact, ZnO nanospheres, and P and N pressure solder joints.

[0031] Wherein, the substrate may be sapphire, silicon carbide, or silicon.

[0032] Wherein, the GaN-based epitaxial layer includes N-type material, quantum well, and P-type material.

[0033] Wherein, the P-type transparent electrode can be a metal material or an oxide material, and the metal material is: Pd, Au or NiAu; the oxide material is ZnO, NiO mgO, In2O3...

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Abstract

The invention relates to a ZnO nanosphere-based GaN-based light emitting diode surface roughening method, which can improve light extraction efficiency. The method comprises the following steps: growing an N-type GaN material, a quantum well and a P-type GaN material on a substrate; depositing a layer of P-type transparent electrode used for ohmic contact on the P-type material; preparing a layer of ZnO nanosphere on the transparent electrode by a sol-gel method; corroding the ZnO and the P-type transparent electrode to expose corroded areas and corroding the ZnO and the P-type transparent electrode to the N-type GaN material; and preparing P and N press welding points. The method has the advantages of the capacity of effectively improving the light extraction efficiency of a light emitting diode, simple preparation method, easily-controlled process procedure, suitability for mass production and no special requirement on growth equipment and process conditions.

Description

technical field [0001] The invention relates to a method for roughening the surface of a light-emitting diode, in particular to a method for roughening the surface of a GaN-based light-emitting diode based on ZnO nanospheres that can increase light extraction efficiency. technical background [0002] GaN-based light-emitting diodes (LEDs) are widely used in the fields of display technology and solid-state lighting due to their excellent characteristics such as long life, high reliability, high efficiency and energy saving. [0003] Although semiconductor light-emitting diodes have made great progress in technology and have been commercialized, because the luminous efficiency is not high enough, it is still a long way to go before replacing fluorescent lamps and being applied to general lighting. Therefore, how to improve luminous efficiency has become a major technical bottleneck faced by GaN-based LEDs. There are two ways to improve LED luminous efficiency: one is to impro...

Claims

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Application Information

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IPC IPC(8): H01L33/38
Inventor 徐瑾张建宝刘榕
Owner HC SEMITEK CORP
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