Method for improving brightness of LED chip

Abstract

The invention discloses a method for improving brightness of an LED chip. The method comprises the following steps of: utilizing the metallic organic chemical vapor phase deposition to grow a GaN semiconductor layer comprising an N-GaN layer, a quantum well and a P-GaN layer on a sapphire substrate; utilizing the ICP Etching or RIE to make partial N-GaN layer exposed; coating a metallic layer on the GaN semiconductor layer by vaporization and using the metallic layer as a mask film layer; adopting the laser scribing technique to scribe the formed chip unit down to the sapphire substrate; corroding the N-GaN layer on the side wall of a scribing way by using the metallic layer as the mask film, so that the N-GaN layer forms a structure of a gradually changed inverted triangle; removing the metallic layer; manufacturing a transparent electrode, an N / P electrode and an SiO2 passivation layer on the corroded chip unit; and grinding the back of the LED wafer for thinning, and breaking the LED wafer by a breaking machine to obtain the LED chip. The method has the advantages of changing transmission distance of light, increasing a probability of photons escaping from the chip, improving the light outputting efficiency of the LED chip and making the brightness of the LED chip improved by over 10 percent.

Description

technical field [0001] The invention relates to the field of semiconductor light-emitting diodes, in particular to a method for improving the brightness of LED chips. Background technique [0002] Light-emitting diodes have the advantages of small size, high efficiency and long life, and are widely used in traffic indication, outdoor full-color display and other fields. In particular, the use of high-power light-emitting diodes may realize semiconductor solid-state lighting, which has caused a revolution in the history of human lighting, and has gradually become a research hotspot in the field of electronics. In order to obtain high-brightness LEDs, the key is to improve the internal quantum efficiency and external quantum efficiency of the device. At present, the light extraction efficiency of the chip is the main factor limiting the external quantum efficiency of the device. The main reason is that the refractive index difference between the substrate material, the epitax...

AI Technical Summary

Problems solved by technology

At present, the light extraction efficiency of the chip is the main factor limiting the external quantum efficiency of the device. The main reason is that the refractive index difference between the substrate material, the epitaxial material, and the air is relatively large, which causes the light generated in the active region to completely occur at the interface of different refractive index materials. reflective and cannot export the chip

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