High-thermal conductive metal base plate used for transferring gallium nitride epitaxial layer of LED and preparation method thereof

Abstract

The invention discloses a high-thermal conductive metal base plate used for transferring a gallium nitride epitaxial layer of an LED and a preparation method thereof. The method comprises the following steps: performing conductive treatment on a substrate with a gallium nitride film layer; plating a metal A on the surface of the substrate with the gallium nitride film layer; plating a metal B on the surface of the metal A plating layer; alternately plating the metals A and B repeatedly to form a multilayer metal structure; thickening the surface of the multilayer metal structure by electroplating copper; plating a metal C on the surface of the copper; and finally, obtaining the high-thermal conductive metal base plate used for transferring the gallium nitride epitaxial layer of the LED. All the raw materials adopted by the invention do not contain heavy metals, so the raw materials are environment-friendly, the raw materials are simple and easily obtained, and the production process is easy to operate; and a metal base plate LED luminous device prepared by the method of the invention after transferring is applicable to the field of high-power LEDs. The prepared LED has the advantages of high luminous efficiency, low energy consumption, long service life and lower production cost, and accords with the condition of large-scale industrial application; and the quality of the LED accords with European Union Standards and United States Standards.

Description

technical field [0001] The invention relates to a metal base plate with high thermal conductivity used for LED gallium nitride epitaxial layer transfer and a preparation method thereof. Background technique [0002] GaN-on-Si epitaxial layer transfer technology is a hot research direction in the LED field in recent years. Researchers grow gallium nitride on materials such as silicon, sapphire, and SiC to produce light-emitting diodes (LEDs). However, due to the poor heat dissipation of sapphire, the LED produced has a short service life, which seriously affects its practical field; and the high production cost of SiC substrate also limits its industrial application. In this case, one turns the substrate to monocrystalline silicon. Due to the mature production process of monocrystalline silicon and the easy availability of raw materials, it is gradually replacing the previous substrate material. With the deepening of research, it was found that silicon absorbs visible ligh...

AI Technical Summary

Problems solved by technology

However, after the GaN epitaxial layer is transferred to the metal substrate, due to the large difference in expansion coefficient between the substrate metal and GaN, the GaN epitaxial layer is cracked, which affects the subsequent processing of the LED.