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Method for preparing low-dielectric constant nano silicon oxide molecular sieve thin film

A technology of nano-silicon oxide and low dielectric constant, applied in chemical instruments and methods, molecular sieves and alkali exchange compounds, inorganic chemistry, etc., can solve problems such as high energy consumption, decreased crystallinity of materials, and secondary pollution

Inactive Publication Date: 2012-02-29
SHANGHAI SECOND POLYTECHNIC UNIVERSITY
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  • Abstract
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  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to propose a new method for preparing low dielectric constant materials, so as to overcome the disadvantages of high-temperature roasting method in the prior art, such as high energy consumption, long time, decline in material crystallinity, and secondary pollution.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] The method of the present invention is implemented according to the following steps to prepare a low dielectric constant nano silicon oxide molecular sieve film.

[0020] (1) Preparation of pure silicon molecular sieve nanoparticles

[0021] According to 9TPA:25SiO 2 :480H 2 The molar ratio of O:100EtOH, with TEOS as silicon source, TPAOH as template and alkali source, stirred at 24°C for about 3 days. After TEOS was completely hydrolyzed, the mixed solution was transferred to a 95°C oil bath for hydrothermal crystallization for 3 days, and the reactants were uniformly dispersed colloidal solutions. Put the colloid solution into a centrifuge tube and centrifuge at a high speed (24000rpm) for 1.5h to obtain the colloid precipitate. Pour out the supernatant, add a certain amount of 0.1M ammonia solution, disperse by ultrasonic oscillation for 1.5h, and centrifuge again. The experiment process is repeated 3 to 4 times to obtain a pure sol, which is freeze-dried at -45°C...

Embodiment 2

[0027] Carried out as in Example 1, except that the distance between the center of the substrate and the lower end of the ultraviolet lamp was 7 cm, and the dielectric constant ε of the prepared film was measured to be 2.2 by spectroscopic ellipsometry.

Embodiment 3

[0029] Carried out as in Example 1, except that the distance between the center of the substrate and the lower end of the ultraviolet lamp was 6 cm, and the dielectric constant ε of the prepared film was measured to be 2.2 by spectroscopic ellipsometry.

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Abstract

The invention discloses a method for preparing a low-dielectric constant nano silicon oxide molecular sieve thin film, comprising the preparation of pure silicon molecular sieve nano particles, the synthesis of a pure silicon molecular sieve thin film and the preparation of the low-dielectric constant nano silicon oxide molecular sieve thin film by ultra-violet photolysis. The method of the invention has convenient operation, low energy consumption, short preparation time, low cost and less pollution, and can ensure that the structure of a mesoporous material can not be damaged. The dielectric constant epsilon of the thin film prepared by the method of the invention is less than or equal to 2.4.

Description

Technical field: [0001] The invention belongs to the technical field of semiconductor material preparation, and in particular relates to a method for preparing a low dielectric constant nano silicon oxide molecular sieve film. Background technique: [0002] With the development of Ultra Large Scale Integration (ULSI) technology, the feature size of electronic devices is shrinking continuously, while the interconnection delay of circuits is gradually increasing, which has become a bottleneck restricting the further improvement of the speed of integrated circuits. Use low dielectric constant (ε) dielectric film as intermetallic and interlayer dielectric to replace traditional SiO 2 Dielectric (ε≈4) is an effective way to reduce interconnect delay, crosstalk and energy consumption. [0003] Usually we adopt the following two methods to reduce the dielectric constant of materials: the first type is to use the low dielectric constant characteristics of organic compounds, but the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B39/00
Inventor 袁昊李庆华田震解丽丽
Owner SHANGHAI SECOND POLYTECHNIC UNIVERSITY
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