Nano-composite organic spin valve

Abstract

The invention discloses a nano-composite organic spin valve, belonging to technical field of spintronics. The spin valve comprises a sandwich structure; a top electrode is a transitional metallic cobalt thin film which is provided with an aluminum thin film as a protective layer; a bottom electrode is a La-Sr-Mn-O thin film; a middle transport layer is a nano-composite of the transitional metallic cobalt and organic micro-molecular 8-hydroxyquinoline aluminum. The preparation method of the spin valve comprises the following steps of: preparing a La-Sr-Mn-O thin film bottom electrode of the spin valve on a strontium titanate substrate by using a laser pulse deposition method; preparing the middle transport layer of the transitional metallic cobalt and 8-hydroxyquinoline aluminum by thermal evaporation; preparing the transitional metallic cobalt thin film as the top electrode on the middle transport layer of the nano-composite; and heating for evaporating the aluminum thin film as the protective layer on the top electrode of the transitional metallic cobalt thin film.

Description

technical field [0001] The invention relates to an organic spin valve, in particular to a nanocomposite organic spin valve, and belongs to the technical field of spin electronics. technical background [0002] Spintronics is one of the fields with great research potential in modern condensed matter physics. Different from traditional electronics, spintronics combines the spin characteristics and charge characteristics of electrons, and its core content is to study the injection, transport, detection and spin regulation of spin-polarized electrons. The electrical properties, optical properties and magnetic properties are combined to realize a new type of spintronic device. The major development of spintronics in recent decades has not only led to the emergence of major applied devices such as high-density memory, but also led to some fundamental physical revolutions, such as spin current, spin pressure, spin Ho The emergence of new physical concepts such as the Bell effect....

AI Technical Summary

Problems solved by technology

The alignment of the FM electrode magnetization directions P and AP leads to changes in the spin valve resistance (R), defining the magnetoresistance effect MR%=(R AP -R P ) / R P .In 2004, Xiong et al prepared LSMO / Alq for the first time 3 / Co organic spin valve, and obtain 40% negative magnetoresistance effect at low temperature 10K, unfortunately there is no room temperature magnetoresistance effect [Xiong et al.Nature 427, 26(2004)]

Subsequently, the T.S.Santos group and the J.H.Shim group successively obtained 4.6% and 5.2% room temperature spin valve effects in tunneling organic spin valves [T.S.Santos et al.Physical Review Letters98, 016601(2007) & J.H. Shim et al.Physical Review Letters 100, 226603(2008)], but the preparation of this kind of spin valve is strictly required to form a good interface, and there are still doubts about whether the spin carriers are regulated in the organic layer

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