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Preparation method of surface phosphate silane-CdSe composite film of monocrystalline silicon piece

A technology of phosphate-based silane and single crystal silicon wafers, which is applied to the surface coating liquid device, special surface, pre-treated surface, etc., can solve the problems of long heat treatment time and cumbersome process conditions, and achieve low cost and high-quality process. Simple, Visible Effects

Inactive Publication Date: 2010-03-17
SHANGHAI SECOND POLYTECHNIC UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to overcome the disadvantages of the existing preparation method using self-assembled films, cumbersome process conditions, and long heat treatment time

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] Pre-treat the monocrystalline silicon wafer first, soak the monocrystalline silicon wafer in aqua regia, heat the aqua regia in an electric furnace, heat at 120°C for 5-6 hours, and naturally cool it at room temperature for 7-8 hours. The silicon wafers were taken out, rinsed repeatedly with deionized water, and dried in a drying dish. Immerse the treated monocrystalline silicon wafer in the prepared aminosilane solution, let it stand for 12 hours, take it out, rinse it with anhydrous methanol and deionized water, dry it with nitrogen, and place it in a solution containing phosphorus oxychloride and 2, 3,5-collidine was reacted in a cyanide solution for 20 minutes, and after taking it out, it was washed with a large amount of deionized water to obtain a film substrate with phosphoric acid groups on the surface.

[0021] Put CdSe at 0.05mg / ml into N,N-dimethylformamide (DMF) dispersant at room temperature, select ultrasonic power of 40W, and ultrasonically disperse for 1...

Embodiment 2

[0027] Pre-treat the monocrystalline silicon wafer first, soak the monocrystalline silicon wafer in aqua regia, heat the aqua regia in an electric furnace, heat at 120°C for 5-6 hours, and naturally cool it at room temperature for 7-8 hours. The silicon wafers were taken out, rinsed repeatedly with deionized water, and dried in a drying dish. Immerse the treated monocrystalline silicon wafer in the prepared aminosilane solution, let it stand for 12 hours, wash it with anhydrous methanol and deionized water after taking it out, dry it with nitrogen, and place it in a solution containing phosphorus oxychloride and 2 , 3,5-collidine in the cyanide solution for 20 minutes, take it out and wash it with a large amount of deionized water to obtain a film substrate with phosphoric acid groups attached to the surface.

[0028] Put CdSe at 0.1 mg / ml into N,N-dimethylformamide (DMF) dispersant at room temperature, and ultrasonically disperse (40W) for 2 hours to obtain a stable CdSe susp...

Embodiment 3

[0034] Pre-treat the monocrystalline silicon wafer first, soak the monocrystalline silicon wafer in aqua regia, heat the aqua regia in an electric furnace, heat at 120°C for 5-6 hours, and naturally cool it at room temperature for 7-8 hours. The silicon wafers were taken out, rinsed repeatedly with deionized water, and dried in a drying dish. Immerse the treated monocrystalline silicon wafer in the prepared aminosilane solution, let it stand for 12 hours, wash it with anhydrous methanol and deionized water after taking it out, dry it with nitrogen, and place it in a solution containing phosphorus oxychloride and 2 , 3,5-collidine in the cyanide solution for 20 minutes, take it out and wash it with a large amount of deionized water to obtain a film substrate with phosphoric acid groups attached to the surface.

[0035] At room temperature, soak CdSe at 0.15 mg / ml into N,N-dimethylformamide (DMF) dispersant, and ultrasonically disperse (40W) for 4 hours to obtain a stable CdSe sus...

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Abstract

The invention relates to a preparation method of a surface phosphate silane-CdSe composite film of a monocrystalline silicon piece, which comprises: firstly, a monocrystalline silicon piece is immersed in chloroazotic acid, taken out after being heated and naturally cooled, dried after being repeatedly rinsed by deionized water, and immersed into a prepared amino silane solution, and an amino silane film is formed on the surface of a basal piece; the basal piece is placed into a methane cyanide solution containing phosphorus oxychloride and 2,3,5-collidine to react for 20 minutes, the basal piece is rinsed by deionized water after being taken out, and the film basal piece with phosphate groups on the surface is obtained; and the basal piece is placed into CdSe suspending liquid, allowed tostand for 2 to 24 hours at 30 to 90 DEG C, rinsed by a large amount of deionized water after being taken out, and dried by the blowing of nitrogen, and thus the monocrystalline silicon piece with a CdSe composite film deposited on the surface is obtained. The invention has simple technology, low cost and no environmental pollution, and the prepared CdSe composite film has obvious function of friction reduction and excellent abrasion resistance and adhesion resistance properties.

Description

technical field [0001] The invention relates to a method for preparing a phosphate-based silane-CdSe composite thin film on the surface of a single crystal silicon chip. Background technique [0002] With the advancement of high technology, the machinery manufacturing industry is developing in the direction of miniaturization, which involves the tribological problems of the surface of micro-machines. Due to the advantages of high hardness, low cost and small surface roughness of silicon material, the application in MEMS has been paid more and more attention. However, silicon materials without surface treatment are highly brittle, and surface cracks are prone to delamination wear and brittle fracture under low tensile stress, which is difficult to meet the requirements of use. Therefore, surface modification technology is required to improve the surface micromechanical properties of silicon materials. To improve the microscopic friction and wear properties of silicon materia...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/00B05D5/08B05D3/10B05D1/18
Inventor 安双利
Owner SHANGHAI SECOND POLYTECHNIC UNIVERSITY
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