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MMIC InGaP HBT power amplifier

A power amplifier and narrow hole technology, which is applied in the field of microwave transmission devices, can solve the problems of increasing the fabrication time and processing difficulty of microstrip circuits, large circuit area, large insertion loss, etc., and achieves reduction of harmonic components and good harmonic suppression. The effect of improving the ability and linear characteristics

Inactive Publication Date: 2010-03-10
EAST CHINA JIAOTONG UNIVERSITY
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the above application requires several combinations of defective cells, which will result in larger circuit area and higher insertion loss
Moreover, DGS, PBG and EBG need etching process and position calibration procedure on the back of the ground plane, therefore, increasing the production time and processing difficulty of the microstrip circuit

Method used

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  • MMIC InGaP HBT power amplifier
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Examples

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Embodiment Construction

[0013] The embodiment of the invention is attached figure 2 shown. An HMC454ST89 power amplifier is installed at the input port (1), and an asymmetric spur narrow hole structure filter is set at the output port. The length of the first spur narrow hole (4) in the spur hole structure is 7.8mm, and the second spur narrow hole ( 5) is 11.3mm in length, and the length difference between the two spur narrow holes is 3.5mm. Due to the adoption of the loading asymmetric spur narrow hole structure, the filter characteristics with two different stopband characteristics are characterized at the port (3), and the two stopband positions are designed at the second and third harmonic frequency points of the input signal; Therefore, the traditional MMIC InGaP HBT power amplifier has a good harmonic suppression ability, which greatly improves the linearity of the output signal, and produces stop-band characteristics at the second and third harmonics. After testing, its harmonic Wave compon...

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PUM

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Abstract

The invention relates to an MMIC InGaP HBT power amplifier, and an asymmetric spurline structure consisting of a first spurline (4) and a second spurline (5) with the different lengths is loaded on anoutput port (3) of the MMIC InGaP HBT power amplifier. The regulation of the length difference (6) of the asymmetric spurline structure can lead the output port (3) of the MMIC InGaP HBT power amplifier to have the filter feature of two stop-bands, lead the MMIC InGaP HBT power amplifier to have excellent harmonic suppression ability, greatly upgrade the linear feature of output signals, producethe stop-band feature at the second harmonic and the third harmonic and greatly reduce harmonic components. The invention has the advantages of compact design, easy integration and convenient use in adense integrated circuit, thereby being applicable to suppress high-order harmonics for microwave circuits.

Description

technical field [0001] The invention relates to a novel MMIC InGaP HBT power amplifier (MMIC gallium indium phosphide heterojunction bipolar transistor power amplifier) ​​with asymmetric spur narrow hole structure, which belongs to the technical field of microwave transmission devices. Background technique [0002] Suppression of the second and third harmonics at the output of a power amplifier is an important topic in the design of modern microwave circuits. Generally, pre-distortion and feedback techniques are widely used in the optimization and improvement of nonlinear performance of active devices to reduce the harmonics and noise of the output signal of the power amplifier. On the other hand, due to the advantages of simple fabrication and low cost, passive microstrip structures such as microstrip filters and bandgap resonators are also commonly used for harmonic suppression. In particular, photonic bandgap (PBG), electromagnetic bandgap (EBG) and defect ground structu...

Claims

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Application Information

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IPC IPC(8): H03F1/02H03F3/21
Inventor 刘海文王杉
Owner EAST CHINA JIAOTONG UNIVERSITY
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