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Technique for processing silicon chip

A processing technology and technology of silicon wafers, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as increasing product costs, achieve the effects of increasing yield, reducing removal amount, and ensuring processing accuracy

Active Publication Date: 2010-02-24
GRINM SEMICONDUCTOR MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, in order to solve the disc marks produced by double-sided grinding, a step of fine grinding can be added after double-sided rough grinding, but adding fine grinding will further increase the cost of the product

Method used

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  • Technique for processing silicon chip
  • Technique for processing silicon chip
  • Technique for processing silicon chip

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] Use the P (100) produced by the Czochralski method, 15 pieces of 12-inch double-sided grinding discs with a resistivity of 1-3Ωcm, and use the HF tank to add H on a conventional cleaning machine 2 o 2 Or the mixture of hydrofluoric acid and O3, usually the concentration of hydrofluoric acid is 49%, H 2 o 2 The concentration is 30% (their usage ratio is 1:0.5) to rinse the silicon wafer to remove the microscopic raised parts on the surface, and then perform etching on an acid etching machine, and the etching removal amount is 15 microns. AFS3220 geometric parameter tester was used to measure the geometric parameters of the silicon wafer before and after treatment, so as to obtain the change of GBIR before and after acid corrosion. The change of GBIR (total thickness) before and after corrosion is less than 0.9 microns, and the change of GBIR of each piece is as follows: image 3 shown. It can be seen from the figure that the change of GBIR is small, which shows that ...

Embodiment 2

[0033] Take the above 15 silicon wafers etched by acid, and use the method of the present invention to perform double-sided polishing on a Speedfam20B polishing machine, and the polishing removal amount is 15 microns. Then wash it with a washing machine and dry it with a spin dryer. See GBIR after polishing. Figure 4 . It can be seen from the figure that after the present invention, the total removal amount after grinding is only 30 microns, but the precision is higher.

Embodiment 3

[0035] Get above 15 double-sided grinding sheets and process with the existing technology at present. In order to remove the disc marks on the surface, use a single-side grinder for fine grinding, removing 10 microns per side (20 microns in total). Then the grinding sheet is corroded by alkali corrosion to remove the damage on the surface, and the removal amount is 15 microns. Finally, double-sided polishing is performed with a removal volume of 15 microns. After processing by the current processing technology, the removal amount is 50 microns.

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PUM

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Abstract

The invention discloses a technique for processing a silicon chip, which comprises the following steps: (1) performing double-sided grinding on the chamfered silicon chip by a double-sided grinding machine; (2) removing micro-convex parts on the silicon surface with mixed solution combined by HF solution and either H2O2 or O3; (3) performing conventional acid corrosion on the silicon chip; and (4)performing conventional double-sided polishing on the silicon chip after the acid corrosion, and performing single-sided fine polishing and cleaning on the silicon chip. The technique for processingthe silicon chip has the advantages of capability of obtaining the silicon chip with high flatness and capability of reducing the removal amount in the whole manufacturing process about 20 microns which is equivalent to the removal amount in single-sided polishing.

Description

technical field [0001] The invention relates to a silicon chip processor for removing mechanical damage and reducing silicon chip processing removal amount. Background technique [0002] Semiconductor silicon wafer is the main substrate material of modern ultra-large-scale integrated circuits. Generally, it is an integrated circuit-level wafer manufactured through processes such as crystal pulling, slicing, chamfering, grinding (including grinding and grinding), corrosion, polishing, and cleaning. Semiconductor wafers. Among them, the grinding process after chamfering can make the silicon wafer obtain a higher-precision shape, and the machining accuracy directly affects the geometric parameters of the product. [0003] The ability of the traditional double-sided lapping technology (lapping) of silicon wafers to improve the machining accuracy of the surface of 300mm silicon wafers has been difficult to greatly improve. After grinding, the local flatness of the silicon wafer...

Claims

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Application Information

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IPC IPC(8): H01L21/00H01L21/02H01L21/302H01L21/304H01L21/306
Inventor 库黎明闫志瑞索思卓黄军辉葛钟陈海滨张国栋盛方毓
Owner GRINM SEMICONDUCTOR MATERIALS CO LTD
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