Reacting chamber and plasma processing system with same

Abstract

The invention discloses a reacting chamber. The chamber is provided with a vacuum pump port connected with a vacuum pump, and is provided with a guide part corresponding to a turning position in the chamber, wherein the shape and the arrangement direction of the guide part conform to the air flow direction in the chamber for reducing and even preventing air flow in the chamber from generating reflection and onflow phenomenon. Furthermore, the invention also provides a plasma processing system with the reacting chamber. The reacting chamber and the plasma processing system can reduce and even avoid particulate pollution in the chamber so as to improve the manufacturing / processing quality of a workpiece, technical yield and air exhaust velocity.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular, to a reaction chamber and a plasma processing system with the reaction chamber. Background technique [0002] With the rapid development of electronic technology, people have higher and higher requirements for the integration of integrated circuits, which requires companies that produce integrated circuits to continuously improve the processing / processing capabilities of semiconductor devices. Currently, plasma processing techniques such as plasma deposition techniques, plasma etching techniques, and the like are widely used in the processing / processing of semiconductor devices. These plasma processing technologies usually need to be realized by means of corresponding plasma processing systems. [0003] Generally, a reaction chamber for providing a vacuum environment is provided in the above-mentioned plasma processing system. In practical applications, in order to obtai...

AI Technical Summary

Problems solved by technology

Due to the limited size of the outlet, the reflection of the airflow occurs near the outlet (as shown by the dotted circle at the interface in the figure), and causes the airflow to form turbulent flow inside the chamber, so that the particles deposited inside the chamber and / or The fine dust is carried and rolled up by the reflected air flow, and pollutes the processed workpiece in the chamber 3, which affects the processing / processing results of the workpiece and affects the yield of the process

At the same time, the air flow with the above-mentioned flow direction will form a flow bottleneck at the interface position of the above-mentioned chamber 3, and affect the pumping speed

[0007] Similarly, similar problems also occur at corner positions in the chamber 3, for example, reflected air flow also occurs at the inner corner positions on the left side of the chamber 3 and at the inner corner positions on the right side of the chamber 3 (the corner positions in the figure As shown by the dotted circle at ), and cause the air flow to form turbulent flow in the chamber 3, thereby causing problems that affect the workpiece processing / handling results, process yield and pumping speed, etc.

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