Three-dimensional structure TM010-lambda/4 millimeter wave resonator based on silicon technology

Abstract

The invention discloses a three-dimensional structure TM010-lambda / 4 millimeter wave resonator based on the silicon technology. Two output ends a, b of two active circuits are connected with two open ends of the corresponding lambda / 4 resonator at the juncture between a silicon substrate layer and an encapsulated layer; two short circuit ends of the lambda / 4 resonator is connected with a cylindrical waveguide resonator on a first electrical conduction metal plate and realizes the energy coupling by a groove joint on the first electrical conduction metal plate; a rectangular waveguide is assembled between the first electrical conduction metal plate and a second electrical conduction metal plate; a rectangular wall of the rectangular waveguide is intersected with the outer wall of the cylindrical waveguide; the intersecting common part is removed so as to realize the energy coupling of the rectangular waveguide and the cylindrical waveguide. The resonator is suitable for being realized on the encapsulated layer based on the silicon technology; the coupling between a passive circuit, a power source and a signal wire on the silicon chip is small; the dissipation influence of the silicon chip is small; and simultaneously the TM010-lambda / 4 millimeter wave resonator obtains the power output which is higher by one order of magnitude than that the traditional lambda / 4 resonator; therefore the TM010-lambda / 4 millimeter wave resonator has the using value in a millimeter wave integrated circuit based on the silicon technology.

Description

technical field [0001] The invention relates to a millimeter wave oscillation source generator based on silicon technology, in particular to a three-dimensional structure TM010-λ / 4 millimeter wave resonator based on silicon technology. Background technique [0002] With the development of wireless communication and wireless networks, microwave band spectrum resources have been overwhelmed, and it is urgent to further develop and utilize millimeter wave spectrum resources that have larger bandwidth and greater communication capacity than microwave bands. In recent years, the research on millimeter-wave band applications (such as short-distance large-capacity wireless communication systems, sensor networks, vehicle collision avoidance systems, etc.) has become a research hotspot. Especially for the 60GHz frequency band, the US FCC (Federal Communication Commissions) has used the 57-64GHz frequency band as an industrial, scientific, and medical (ISM) application frequency band,...

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Problems solved by technology

[0004] One of the weak links in the research of millimeter-wave radio frequency integrated circuits based on silicon technology at present is that the power output of radio frequency oscillators is relatively small, generally in the order of 10dBm (10mW). As far as the machine is concerned, it cannot meet the application requirements in many cases

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