Variable-resistance memory doped with ZrO2 and preparation method thereof

A technology of resistive variable memory and its manufacturing method, which is applied in the field of information storage, can solve problems such as device performance degradation, high device power consumption, and damage to the resistance transition storage layer, and achieve the effects of low cost, good compatibility, and simple structure

Inactive Publication Date: 2009-11-11
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The present invention aims at existing ZrO 2 As a storage medium, because the forming voltage of the resistive memory is higher than the normal working voltage of the device during the forming process, a large current that will damage the resistance transition storage layer is generated, resulting in a decrease in the performance of the device. It will make the initial power consumption of the device higher, and provide a doped ZrO 2 Resistive memory and manufacturing method thereof

Method used

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  • Variable-resistance memory doped with ZrO2 and preparation method thereof
  • Variable-resistance memory doped with ZrO2 and preparation method thereof
  • Variable-resistance memory doped with ZrO2 and preparation method thereof

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Embodiment 1

[0027] figure 2 Doping ZrO for the embodiment of the present invention 2 Schematic diagram of the basic structure of resistive memory. Such as figure 2 As shown, the doped ZrO 2 The RRAM includes a substrate 201 , a lower electrode 202 disposed on the substrate 201 , a resistance transition memory layer disposed on the lower electrode 202 , and an upper electrode 206 disposed on the resistance transition memory layer. The resistance switch memory layer is composed of a first metal oxide film 203 , a metal film 204 and a second metal oxide film 205 . The metal film 204 is arranged between the first metal oxide film 203 and the second metal oxide film 205, and the first metal oxide film 203 and the second metal oxide film 205 are both made of ZrO 2 The thin film made, the metal thin film 204 is a thin film made of Cu.

[0028] The substrate 201 is generally made of silicon dioxide, doped silicon dioxide or other insulating materials.

[0029] The lower electrode 202 is m...

Embodiment 2

[0033] image 3 Doping ZrO for the embodiment of the present invention 2 Flowchart of the manufacturing method of the resistive variable memory. Such as image 3 Shown, described preparation method comprises the following steps:

[0034] Step 301: forming an Al electrode as a bottom electrode on a substrate.

[0035] The lower electrode can be formed by physical vapor deposition or chemical vapor deposition such as electron beam evaporation and sputtering.

[0036] Step 302: forming Cu-doped ZrO on the lower electrode 2 The fabricated thin film acts as a resistive switch memory layer.

[0037] In specific production practice, firstly, a first metal oxide film is formed on the lower electrode; then, a metal film is formed on the first metal oxide film; finally, a second metal oxide film is formed on the metal film. Oxide film, wherein, the first metal oxide film and the second metal oxide film are made of ZrO 2 The thin film made, the metal thin film is a thin film made ...

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Abstract

The invention relates to a variable-resistance memory doped with ZrO2 and a preparation method thereof, belonging to the technical field of information memory. The memory comprises an upper electrode, a lower electrode and a resistance conversion memory layer that is arranged between the upper electrode and the lower electrode; the lower electrode is made of Al; and the resistance conversion memory layer is made of Cu doped with ZrO2. The variable-resistance memory doped with ZrO2 has simple structure, takes the Al with strong metal activity as the lower electrode, can absorb the oxygen ions in the ZrO2 in the resistance conversion memory layer and can form a large amount of oxygen vacancies in the ZrO2; when the device is firstly converted from high-resistance state to low-resistance state, the device needs not to be activated by a high operation voltage, thus eliminating the Forming process required when the variable-resistance memory is firstly converted from the high-resistance state to the low-resistance state.

Description

technical field [0001] The present invention relates to a memory and its manufacturing method, in particular to a doped ZrO 2 A resistive variable memory and a manufacturing method thereof belong to the technical field of information storage. Background technique [0002] Resistive RAM (RRAM) technology is based on the basic working principle that the resistance of thin film materials can be reversibly switched between a high-resistance state and a low-resistance state. As early as the 1960s, the research on the resistance switching characteristics has been started, but due to the limitations of material technology and device manufacturing technology, it has not attracted attention. In recent years, with the rapid development of material preparation technology and device manufacturing technology, resistive variable memory has high density, low power consumption, good durability, long retention time and good scalability compared with mainstream Flash memory devices on the ma...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00G11C11/56
Inventor 刘明李颖弢龙世兵王琴刘琦张森王艳左青云
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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