Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for manufacturing lower substrate of triple-medium layer of field emission display

A field emission and display technology, applied in the manufacture of discharge tubes/lamps, cold cathodes, electrode systems, etc., can solve the problems of poor insulation and short circuit of cathode grids, and achieve the effect of improving withstand voltage characteristics

Inactive Publication Date: 2010-12-08
IRICO
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In view of the poor insulation between the cathode and grid in the prior art, and the serious technical problem of short circuit after sintering, the present invention provides a method for manufacturing a substrate under a triple dielectric layer of a field emission display, comprising the following steps:

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for manufacturing lower substrate of triple-medium layer of field emission display

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] A method for manufacturing a substrate under a triple dielectric layer of a field emission display, comprising the steps of:

[0019] 1) On the glass substrate 1, use the electrode paste VG903 of DuPont to print the gate electrode layer 2 in sequence, and then use the prepared photosensitive medium paste to print the first photosensitive medium layer 3, and dry it at 100°C for 30 minutes to obtain the grid electrode. The thickness of the electrode layer 2 is 10 microns, and the thickness of the first photosensitive medium layer 3 is 30 microns;

[0020] 2) Cover the first photosensitive medium layer 3 and the gate electrode layer 2 with a grid mask plate, and perform one-time exposure and development on the first photosensitive medium layer 3 and the gate electrode layer 2. The exposure time is 12 minutes, and the wavelength of ultraviolet light is 360 nanometers, and then developed with 0.5% aqueous sodium carbonate solution to obtain grid line patterns;

[0021] 3) P...

Embodiment 2

[0028] A method for manufacturing a substrate under a triple dielectric layer of a field emission display, comprising the steps of:

[0029] 1) On the glass substrate 1, the electrode paste VG903 of DuPont Company was used to print the gate electrode layer 2 sequentially, and then the first photosensitive medium layer 3 was printed using the prepared photosensitive medium paste, and dried at 120° C. for 20 minutes to obtain the first The thickness of the photosensitive medium layer is 15 microns, and the thickness of the gate electrode layer 2 is 10 microns;

[0030] 2) Cover the first photosensitive medium layer 3 and the gate electrode layer 2 with a grid mask plate, and perform one-time exposure and development on the first photosensitive medium layer 3 and the gate electrode layer 2. The exposure time is 12 minutes, and the wavelength of ultraviolet light is 360 nanometers, and then developed with 0.5% aqueous sodium carbonate solution to obtain grid line patterns;

[003...

Embodiment 3

[0038] A method for manufacturing a substrate under a triple dielectric layer of a field emission display, comprising the steps of:

[0039] 1) On the glass substrate 1, use the electrode paste VG903 of DuPont to print the gate electrode layer 2 in sequence, and then use the prepared photosensitive medium paste to print the first photosensitive medium layer 3, and dry it at 130°C for 10 minutes to obtain the grid electrode. The thickness of the electrode layer 2 is 30 microns, and the thickness of the first photosensitive medium layer 3 is 20 microns;

[0040] 2) Cover the first photosensitive medium layer 3 and the gate electrode layer 2 with a grid mask plate, and perform one-time exposure and development on the first photosensitive medium layer 3 and the gate electrode layer 2. The exposure time is 12 minutes, and the wavelength of ultraviolet light is 360 nanometers, and then developed with 0.5% aqueous sodium carbonate solution to obtain grid line patterns;

[0041]3) Pr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to the technical field of manufacturing field emission displays, and in particular relates to a method for manufacturing a lower substrate of a triple-medium layer of a field emission display. The method comprises the following steps: 1) printing a grid electrode layer and a first light sensitive dielectric layer in turn on a glass substrate; 2) using a mask plate to performexposure development on the first light sensitive dielectric layer and the grid electrode layer; 3) printing an etching type dielectric layer on the first light sensitive dielectric layer; 4) performing electrode medium co-firing on the first light sensitive dielectric layer, naturally cooling the first light sensitive dielectric layer to the room temperature and then taking out the first light sensitive dielectric layer; 5) printing a second light sensitive dielectric layer, drying the second light sensitive dielectric layer and then printing a cathode electrode layer; 6) using a cathode maskplate to cover the second light sensitive dielectric layer and the cathode electrode layer, and performing the exposure development; 7) performing a second electrode medium co-firing; and 8) using the cathode electrode layer and the second light sensitive dielectric layer as masks, and using a wet method to etch the etching type dielectric layer to finish the process of manufacturing the lower substrate. A pressure resistance test shows that the triple-medium in the method can bear at least 200 volts of voltage and cannot be broken down.

Description

technical field [0001] The invention belongs to the technical field of Field Emission Display, and in particular relates to a method for manufacturing a lower substrate cathode, grid and an insulating medium layer between the cathode and grid of a field emission display. Background technique [0002] Field emission display device (FED), as a new type of display device and display technology, is a flat panel display device whose luminescence principle is closest to that of cathode ray tube (CRT) among flat panel display devices, and is considered to be a real possibility to combine with plasma (PDP) and flat-panel displays that compete with liquid crystal display devices (LCD). However, there are still many technical problems that have not been effectively resolved, which limits the popularization of the application of FED in actual production and life. Among the many technical problems, the most critical is the production of the lower substrate, because the lower substrate ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01J9/00H01J9/02
Inventor 张斌
Owner IRICO
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com