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Low damage ICP etching method for manufacturing GaN base photoelectric device

A photoelectric device, low-damage technology, applied in the direction of electrical components, semiconductor devices, semiconductor/solid-state device manufacturing, etc., can solve problems such as complex processes and long time consumption, to ensure production efficiency, improve stability and reliability, and improve production Effects on efficiency and product quality

Inactive Publication Date: 2009-10-07
EPILIGHT TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the method is complex and time-consuming, and is only applicable to SiC materials

Method used

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  • Low damage ICP etching method for manufacturing GaN base photoelectric device
  • Low damage ICP etching method for manufacturing GaN base photoelectric device
  • Low damage ICP etching method for manufacturing GaN base photoelectric device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Please refer to figure 2 As shown, it is a schematic cross-sectional view of the GaN-based light-emitting diode prepared in this embodiment. When preparing the GaN-based light-emitting diode, conventional production equipment and process methods in the field can be used to sequentially epitaxial buffer layer 20, n-type GaN layer 30, active layer 40 and p-type GaN layer 50 on sapphire substrate 10 to form GaN The material structure of the base LED; then, a layer of ITO (indium tin oxide) layer 70 is prepared on the surface of the p-type GaN layer 50 by means of electron beam evaporation or sputtering; then a layer of photoresist 80 is coated on its surface. , using photolithography technology to expose the ITO on a part of the p-type GaN layer 50, the thickness of the photoresist is 1.5-3um, this embodiment is preferably 2um; then wet etching is used to etch away the previously exposed ITO, and the exposed part is p-type GaN, such as Figure 3a shown.

[0025] Using ...

Embodiment 2

[0032] Please refer to figure 2 As shown, it is a schematic cross-sectional view of the GaN-based light-emitting diode prepared in this embodiment. When preparing the GaN-based light-emitting diode, conventional production equipment and process methods in the field can be used to sequentially epitaxial buffer layer 20, n-type GaN layer 30, active layer 40 and p-type GaN layer 50 on sapphire substrate 10 to form GaN The material structure of the base LED; then, a layer of ITO (indium tin oxide) layer 70 is prepared on the surface of the p-type GaN layer 50 by means of electron beam evaporation or sputtering; then a layer of photoresist 80 is coated on its surface. , using photolithography technology to expose the ITO on a part of the p-type GaN layer 50, the thickness of the photoresist is 1.5-3um, this embodiment is preferably 2um; then wet etching is used to etch away the previously exposed ITO, and the exposed part is p-type GaN, such as Figure 3a shown.

[0033] Using ...

Embodiment 3

[0040] Please refer to figure 2 As shown, it is a schematic cross-sectional view of the GaN-based light-emitting diode prepared in this embodiment. When preparing the GaN-based light-emitting diode, conventional production equipment and process methods in the field can be used to sequentially epitaxial buffer layer 20, n-type GaN layer 30, active layer 40 and p-type GaN layer 50 on sapphire substrate 10 to form GaN The material structure of the base LED; then, a layer of ITO (indium tin oxide) layer 70 is prepared on the surface of the p-type GaN layer 50 by means of electron beam evaporation or sputtering; then a layer of photoresist 80 is coated on its surface. , using photolithography technology to expose the ITO on a part of the p-type GaN layer 50, the thickness of the photoresist is 1.5-3um, this embodiment is preferably 2um; then wet etching is used to etch away the previously exposed ITO, and the exposed part is p-type GaN, such as Figure 3a shown.

[0041] Using ...

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PUM

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Abstract

The invention relates to a method for manufacturing GaN base photoelectric device, provides a low damage ICP etching method for manufacturing GaN base photoelectric device, which etches the p type GaN layer to n type GaN layer by ICP etching technology. The method comprises: first step - main etching: etching from the p type GaN layer to the upper surface of the n type GaN layer by using the mixture of Cl2 and Ar as etching gas; second step - auxiliary etching: etching off a part of n type GaN from the upper surface of the n type GaN layer by using the BCl3 gas as etching gas. The invention can reduce the defect damage or thermal damage on the p type GaN surface and n type GaN surface caused by the ICP etching, simplifies the subsequent process of cleaning surface photoresist, and improves production efficiency and product quality.

Description

technical field [0001] The invention relates to a manufacturing method of a GaN-based optoelectronic device, in particular to a low-damage ICP etching process for manufacturing the GaN-based optoelectronic device. Background technique [0002] With the continuous reduction of the minimum size of integrated circuits, the continuous improvement of integration, and the expansion of the size of silicon single crystal substrates, the requirements for etching technology are becoming higher and higher. In addition to high-quality etching performance, it is also required to ensure extremely high stability and extremely low defect rate in mass production, and its technological level will directly affect the quality of the final product and the advancement of production technology. [0003] Plasma etching (also called dry etching) is one of the key processes in the manufacture of integrated circuits. Inductive coupled plasma etching (Inductive Coupled Plasma-ICP) is a current plasma e...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/3065H01L33/00
Inventor 袁根如郝茂盛张楠李士涛陈诚朱广敏
Owner EPILIGHT TECH
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