Method for improving performance of core device and input-output device
A technology for input and output devices and core devices, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as poor electrical performance, reduce production costs, avoid adverse effects, and reduce the number of masks. Effect
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[0031] It can be known from the background technology that the electrical performance of the semiconductor device formed by the prior art is poor.
[0032] It is found through research that due to the different working voltages of the core device and the input / output device, the thickness of the gate dielectric layer of the core device and the input / output device is different. The gate dielectric layer includes an oxide layer and a high-k gate dielectric layer on the surface of the oxide layer. The thickness of the oxide layer in the core device is smaller than the thickness of the oxide layer in the input / output device, so that the thickness of the gate dielectric layer of the core device and the input / output device are different. Generally, a thicker oxide layer for the input and output devices is formed first, and then a thinner oxide layer for the core device is formed.
[0033] However, thicker oxide layers in input and output devices are susceptible to etching damage caused b...
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