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Image forming apparatus using amorphous silicon photoconductor

A technology of amorphous silicon and photoreceptors, which is applied in the electrical recording process using charge patterns, equipment and optics for electric recording processes using charge patterns, and can solve problems such as reduced withstand voltage performance, reduction, and destruction of insulation

Inactive Publication Date: 2009-09-23
KYOCERA DOCUMENT SOLUTIONS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] However, although the amorphous silicon photoreceptor of Patent Document 1 can improve the withstand voltage performance to some extent, there are cases where the charge transport efficiency in the photosensitive layer is too low and it is difficult to obtain sufficient sensitivity characteristics.
[0008] In addition, the amorphous silicon photoreceptors of Patent Document 2 and Patent Document 3 do not consider the problem that the withstand voltage performance decreases with the thinning of the photosensitive layer.
Therefore, if the photosensitive layer is thinned, the withstand voltage performance is likely to decrease due to the nitrogen content in the auxiliary layer or the film thickness of the auxiliary layer, and the insulation is destroyed, making it difficult to obtain sufficient sensitivity characteristics.

Method used

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  • Image forming apparatus using amorphous silicon photoconductor
  • Image forming apparatus using amorphous silicon photoconductor
  • Image forming apparatus using amorphous silicon photoconductor

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no. 1 approach

[0038] The image forming apparatus shown in the first embodiment has a photosensitive layer on a substrate, and the photosensitive layer is amorphous in which a high-resistance layer, a charge injection preventing layer, a photoconductive layer, and a surface protection layer are sequentially stacked on the substrate. A silicon photoreceptor, the amorphous silicon photoreceptor is installed in the image forming section. In this amorphous silicon photoreceptor, as figure 1 As shown, the film thickness of the high resistance layer is in the range of 1-4 μm, the film thickness of the photosensitive layer is in the range of 15-25 μm, and the absolute value of the solid photoelectric potential of the photosensitive layer is in the range of 20-100V Inside.

[0039] Each constituent element of the image forming apparatus of the first embodiment will be specifically described below.

[0040] 1. Basic structure

[0041] The image forming apparatus of the present embodiment includes ...

no. 2 approach

[0156] The second embodiment is an image forming method using the image forming apparatus described in the first embodiment. Hereinafter, the image forming method of the second embodiment will be described by taking a full-color image forming method using a full-color image forming apparatus as an example and focusing on differences from the first embodiment.

[0157] First, make figure 2 The amorphous silicon photoreceptors 13M to 13BK of the shown full-color image forming apparatus 10 are rotated clockwise as indicated by the arrows in the figure at a predetermined processing speed (peripheral speed), and then charged by the charging devices 14M to 14BK. Its surface carries a defined potential.

[0158] Next, the surfaces of the amorphous silicon photoreceptors 13M to 13BK are exposed through mirrors or the like while performing light modulation according to the image information by the exposure devices 15M to 15BK. By this exposure, electrostatic latent images of respect...

Embodiment 1

[0168] 1. Fabrication of Amorphous Silicon Photoreceptor

[0169] Amorphous silicon photoreceptors were produced under the conditions shown in Table 1 below using RF power of 13.56 MHz in a glow discharge decomposition apparatus.

[0170] Table 1

[0171]

[0172] The * marks in Table 1 indicate relative to SiH 4 gas flow ratio.

[0173] 2. Measurement of solid photoelectric potential

[0174] The amorphous silicon photoreceptor prepared as described above was mounted on figure 2 In the illustrated full-color image forming apparatus 10, the photopotential of a solid was measured.

[0175] That is, the developing device was removed, a potential probe was attached to the developing position, and the surface potential at the developing position was measured when a solid image (solid image) was formed. In addition, the image forming conditions are as follows.

[0176] Surface potential: 300V

[0177] Luminous flux on amorphous silicon photoreceptor: 0.9μJ / cm2

[0178] ...

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Abstract

The invention provides an image forming apparatus using amorphous silicon photoconductor. The image forming apparatus is provided with an image forming unit including an amorphous silicon photoconductor. The amorphous silicon photoconductor includes a base and a photosensitive layer provided on the base. The photosensitive layer includes a highly resistive layer, a charge-injection inhibition layer, a photoconductive layer and a surface protecting layer successively laminated on the base. The thickness of the highly resistive layer is in the range of 1 mu m to 4 mu m. The thickness of the photosensitive layer is in the range of 15 mu m to 25 mu m and the absolute value of a solid light potential of the photosensitive layer is in the range of 20 to 100 V.

Description

technical field [0001] The present invention relates to electrophotographic image forming apparatuses such as copiers and printers, and more particularly to image forming apparatuses using an amorphous silicon photoreceptor. Background technique [0002] Currently, amorphous silicon photoreceptors are widely used as electrophotographic photoreceptors installed in electrophotographic image forming apparatuses such as copiers and printers. Amorphous silicon photoreceptors have high mechanical strength, and have the advantage of being able to stably provide high-quality images with little abrasion of the photosensitive layer even under repeated use. [0003] On the other hand, in order to meet the requirements of higher resolution, the photosensitive layer of the amorphous silicon photoreceptor is constantly developing towards thinning. By reducing the thickness of the photosensitive layer and increasing the amount of static electricity in the photosensitive layer, the latent ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03G15/00G03G15/01G03G5/04
CPCG03G2215/00957G03G5/08257G03G15/751G03G5/0825
Inventor 石原力高上爱
Owner KYOCERA DOCUMENT SOLUTIONS INC
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