Method for the annealing preparation of tantalum scandium acid plumbum-based ferroelectric film by two step method

A technology of lead tantalum scandate and ferroelectric thin films, which is applied in the field of preparation of lead tantalum scandate-based ferroelectric thin films, can solve the problem of compositional deviation of lead tantalum scandate-based ferroelectric thin films, and achieve high purity and extremely high perovskite phase. Highly preferred orientation of chemical strength and good crystallization performance

Inactive Publication Date: 2009-09-16
SICHUAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to overcome the deficiencies of the prior art, to provide a two-step annealing method for preparing lead tantalum scandate-based ferroelectric thin films, to solve the problem of composition deviation of lead tantalum scandate-based ferroelectric thin films, and to facilitate the realization of Integration of lead tantalum scandate-based ferroelectric thin films and Si-based semiconductor devices

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  • Method for the annealing preparation of tantalum scandium acid plumbum-based ferroelectric film by two step method
  • Method for the annealing preparation of tantalum scandium acid plumbum-based ferroelectric film by two step method
  • Method for the annealing preparation of tantalum scandium acid plumbum-based ferroelectric film by two step method

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Embodiment 1

[0024] The present embodiment prepares 0.95Pb(Sc 0.5 Ta 0.5 )O 3 -0.05PbTiO 3 Ferroelectric thin film (abbreviated as PSTT5), the process steps are as follows:

[0025] (1) Processing of the substrate

[0026] The substrate is Pt / Ti / SiO 2 / Si, the substrate was ultrasonically cleaned in toluene for 5 minutes, then in acetone for 5 minutes, and finally in absolute ethanol for 5 minutes.

[0027] (2) Preparation of transition layer

[0028] Sputtering is used to prepare the transition layer, and the substrate cleaned in step (1) is fixed on the substrate position of the sputtering device. The target is La 0.5 Sr 0.5 CoO 3 , according to La 0.5 Sr 0.5 CoO 3 The stoichiometric ratio of weighing raw materials PbO, La 2 o 3 、Co 2 o 3 and SrCO 3 , the raw materials are made into targets by traditional ceramic synthesis process. The target is fixed on the target position of the sputtering device, and the distance between the target and the substrate is 5 cm. The spu...

Embodiment 2

[0036] The present embodiment prepares 0.95Pb(Sc 0.5 Ta 0.5 )O 3 -0.05PbTiO 3 Ferroelectric thin film (abbreviated as PSTT5), the process steps are as follows:

[0037] (1) Processing of the substrate

[0038] The substrate is Pt / Ti / SiO 2 / Si, the cleaning treatment is the same as in Example 1.

[0039] (2) Preparation of transition layer

[0040] Sputtering is used to prepare the transition layer, and the substrate cleaned in step (1) is fixed on the substrate position of the sputtering device. The target is La 0.5 Sr 0.5 CoO 3 , according to La 0.5 Sr 0.5 CoO 3 The stoichiometric ratio of weighing raw materials PbO, La 2 o 3 、Co 2 o 3 and SrCO 3 , the raw materials are made into targets by traditional ceramic synthesis process. The target is fixed on the target position of the sputtering device, and the distance between the target and the substrate is 5 cm. The sputtering conditions are as follows: the background vacuum is 3×10 -4 Pa, the atmosphere used ...

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Abstract

A method for the annealing preparation of a tantalum scandium acid plumbum-based ferroelectric film by a two step method is disclosed, comprising the technological steps of preparing a transition layer, preparing the tantalum scandium acid plumbum-based ferroelectric film and annealing the tantalum scandium acid plumbum-based ferroelectric film; annealing the tantalum scandium acid plumbum-based ferroelectric film comprises the steps of: putting the tantalum scandium acid plumbum-based ferroelectric film in an annealing furnace, heating up to 800-850 DEG C at a heating rate of 40 DEG C / s in an oxygen flow and then stopping heating up at once so that the tantalum scandium acid plumbum-based ferroelectric film is naturally cooled to 500-600 DEG C along with the furnace, preserving the heat for 3-5 minutes, and afterwards naturally cooling the ferroelectric film to room temperature along with the furnace. The tantalum scandium acid plumbum-based ferroelectric film prepared by the method has a perovskite phase purity capable of reaching 100%, good crystallization performance and low RMS roughness on the surface as well as also has the characteristic of high polarization intensity and high preferred orientation.

Description

technical field [0001] The invention relates to a method for preparing a lead tantalum scandate-based ferroelectric thin film. Background technique [0002] Ferroelectric thin films have properties such as ferroelectricity, piezoelectricity, pyroelectric effect, acousto-optic effect, photorefractive effect, nonlinear optical effect, etc., so one of these properties can be used as a functional device, or through Cross-coupling uses two or more properties to make functional devices, and can also be combined with the functional effects of other materials to make integrated functional devices, which has a very broad application prospect. [0003] Lead scandate tantalum Pb(Sc 0.5 Ta 0.5 )O 3 Ferroelectric thin film is a ferroelectric thin film material with high pyroelectric coefficient, but its crystallization temperature is very high. At present, most of the lead tantalum scandate-based ferroelectric thin films that have been widely studied are annealed at high temperature ...

Claims

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Application Information

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IPC IPC(8): C30B29/22C30B29/30C30B33/02H01L41/24H01L41/39
Inventor 朱建国孙宇澄肖定全李雪东朱基亮
Owner SICHUAN UNIV
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