Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for manufacturing single-chip-integrated GaAs base PHEMT and PIN diode

A PIN diode, monolithic integration technology, applied in the field of compound semiconductor materials and devices, can solve the problems of unfavorable PHEMT circuit potential conversion, large on-resistance, etc.

Active Publication Date: 2010-09-29
SOI MICRO CO LTD
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if a Schottky barrier diode is used to realize the potential conversion of the PHEMT circuit, under high current density, the Schottky barrier diode will produce a large on-resistance, which is not conducive to the realization of the potential conversion of the PHEMT circuit.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for manufacturing single-chip-integrated GaAs base PHEMT and PIN diode
  • Method for manufacturing single-chip-integrated GaAs base PHEMT and PIN diode
  • Method for manufacturing single-chip-integrated GaAs base PHEMT and PIN diode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] In order to make the objectives, technical solutions, and advantages of the present invention clearer, the following further describes the present invention in detail in conjunction with specific embodiments and with reference to the accompanying drawings.

[0035] Such as figure 1 As shown, figure 1 It is a flow chart of the method for manufacturing monolithic integrated GaAs-based PHEMT and PIN diodes provided by the present invention. The method sequentially includes the following process steps: photoetching PIN upper electrode, evaporating upper electrode metal, stripping upper electrode metal, PIN mesa corrosion isolation, and simultaneous Lithography PIN bottom electrode and PHEMT source and drain, evaporation of PIN bottom electrode and PHEMT source and drain metal, stripping PIN bottom electrode and PHEMT source and drain metal, ohmic contact alloy, PHEMT mesa corrosion isolation, PHEMT gate photolithography, grid groove corrosion, evaporation gate Metal, stripping ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method which is used for manufacturing a single-chip-integrated GaAs base PHEMT and a PIN diode. In sequence, the method comprises the steps as follows: a PIN upper electrode is photo-etched, upper electrode metal is vaporized, the upper electrode metal is peeled, a PIN table top is corroded and isolated and a PIN lower electrode and a PHEMT source drain are photo-etchedat the same time. The PIN lower electrode and PHEMT source drain metal are vaporized; the PIN lower electrode and PHEMT source drain are peeled; ohmic contact is carried out on alloy; the PHEMT tabletop is corroded and isolated; the PHEMT grid is photo-etched; the grid groove is corroded; the grid metal is vaporized; the grid metal is peeled; a passivating medium is grown; a hole is etched; one-time wiring photo-etching is carried out; wiring metal is vaporized; and the wiring metal is peeled. The invention integrates the GaAs base PHEMT and PIN diode on the same substrate, so as to realize single-chip-integration of the GaAs base PHEMT and PIN diode.

Description

Technical field [0001] The invention relates to the technical field of compound semiconductor materials and devices, in particular to a method for manufacturing monolithic integrated gallium arsenide (GaAs)-based pseudo-matched high electron mobility transistors (PHEMT) and PIN diodes. Background technique [0002] Pseudo-matched High Electron Mobility Transistor (PHEMT) has the characteristics of high frequency, high speed, high power gain and low noise figure, so it has a wide range of applications in the millimeter wave frequency band, and is widely used in military, space and civil communications fields, such as millimeter wave Radar, electronic warfare, intelligent equipment, satellite communications and radiation astronomy, etc. [0003] PIN diode is a special charge storage diode. Under the forward bias, the on-resistance is very small, which is similar to a short circuit; under the reverse bias, the impedance is very high, which is similar to an open circuit, and has the c...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/82H01L21/822
Inventor 徐静波张海英叶甜春
Owner SOI MICRO CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com