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Method for preparing single chip integrated GaAs-based MHEMT and PIN diode

A PIN diode, monolithic integration technology, applied in the field of compound semiconductor materials and devices, can solve the problems of large on-resistance, unfavorable MHEMT circuit potential conversion, etc.

Inactive Publication Date: 2010-09-29
天津中科微电子技术研发有限公司
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  • Abstract
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  • Application Information

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Problems solved by technology

However, if a Schottky barrier diode is used to realize the potential conversion of the MHEMT circuit, under high current density, the Schottky barrier diode will produce a large on-resistance, which is not conducive to the realization of the potential conversion of the MHEMT circuit.

Method used

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  • Method for preparing single chip integrated GaAs-based MHEMT and PIN diode
  • Method for preparing single chip integrated GaAs-based MHEMT and PIN diode
  • Method for preparing single chip integrated GaAs-based MHEMT and PIN diode

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Embodiment Construction

[0034] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0035] like figure 1 as shown, figure 1 It is a flow chart of a method for manufacturing a monolithic GaAs-based MHEMT and a PIN diode provided by the present invention. The method includes the following process steps in sequence: photoetching the PIN upper electrode, evaporating the upper electrode metal, stripping the upper electrode metal, PIN mesa corrosion isolation, and simultaneously Photolithography of PIN bottom electrode and MHEMT source and drain, evaporation of PIN bottom electrode and MHEMT source and drain metal, stripping of PIN bottom electrode and MHEMT source and drain metal, ohmic contact alloy, MHEMT mesa corrosion isolation, MHEMT gate photolithography, gate trench etching, evaporation gate Metal, Li...

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Abstract

The invention discloses a method for preparing single chip integrated GaAs-based MHEMT and PIN diode; the method sequentially comprises the process steps as follows: photo-etching PIN upper electrode, evaporating upper electrode metal, peeling off upper electrode metal, corroding and separating PIN mesa, photo-etching PIN lower electrode and MHEMT source and drain at the same time, evaporating PIN lower electrode and MHEMT source and drain metal, peeling off PIN lower electrode and MHEMT source and drain metal, corroding and separating ohmic-contacted alloy and MHEMT mesa, MHEMT grid lithography, grid trough corroding, evaporating grid metal, peeling off grid metal, growing passivated medium, etching hole, one-step wiring and photo-etching, evaporating wiring metal, and peeling off wiringmetal. The method integrates the GaAs-based MHEMT and PIN diode on the same substrate, and realizes single chip integrated GaAs-based MHEMT and PIN diode.

Description

technical field [0001] The invention relates to the technical field of compound semiconductor materials and devices, in particular to a method for manufacturing a monolithically integrated gallium arsenide (GaAs)-based strained high electron mobility transistor (MHEMT) and a PIN diode. Background technique [0002] Strained high electron mobility transistor (MHEMT) has the characteristics of high frequency, high speed, high power gain and low noise figure, so it has a wide range of applications in the millimeter wave frequency band, and is widely used in military, space and civilian communication fields, such as millimeter wave radar , electronic warfare, smart equipment, satellite communications and radiation astronomy, etc. [0003] A PIN diode is a special kind of charge storage diode. Under the forward bias voltage, the on-resistance is very small, similar to a short circuit; under the reverse bias voltage, the impedance is very high, similar to an open circuit, and it ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/82H01L21/822
Inventor 徐静波张海英叶甜春
Owner 天津中科微电子技术研发有限公司
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