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Method for preparing semiconductor oxide micro-nano compound structure film

A micro-nano composite structure and semiconductor technology, which can be used in photosensitive devices, capacitor electrolytes/absorbers, capacitor parts, etc., can solve the problems of poor controllability and repeatability of ZnO micro-nano composite structure film materials, and achieve controllability. And the effect of strong repeatability, high solar photoelectric conversion efficiency and simple process

Inactive Publication Date: 2009-05-27
BEIJING UNIV OF CHEM TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the controllability and repeatability of ZnO micro-nano composite structure thin film materials prepared by one-step method are poor.

Method used

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  • Method for preparing semiconductor oxide micro-nano compound structure film
  • Method for preparing semiconductor oxide micro-nano compound structure film
  • Method for preparing semiconductor oxide micro-nano compound structure film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] 1) Preparation of ZnO nanocrystalline film:

[0025] 1.0g ZnO nanocrystals are added into 20ml of absolute ethanol to obtain a milky white solution after ultrasonic dispersion, and the ZnO nanocrystals film is prepared on the pretreated FTO conductive glass by the drop coating method, and then the ZnO nanocrystals film is placed in a muffle furnace at 400 ℃, roasting for 2h, cooling to room temperature to obtain ZnO nanocrystalline film;

[0026] 2) Preparation of ZnO micro-nano composite thin film

[0027] Dissolve flaky micron / submicron ZnO in absolute ethanol to obtain a solution with a concentration of 0.05g / mL, and prepare a layer of large particle micron / submicron ZnO film on the surface of ZnO nanocrystalline film by drop coating method, which will have micronano The ZnO double-layer film with composite structure was placed in a muffle furnace and baked at 400 °C for 1 h, then cooled naturally to room temperature to obtain a ZnO micro-nano composite film.

[00...

Embodiment 2

[0030] 1) TiO 2 Preparation of nanocrystalline thin films:

[0031] 1.0g TiO 2 The nanocrystals were ultrasonically dispersed in 1ml of distilled water to obtain a milky white solution, and TiO was prepared on the pretreated FTO conductive glass by scalpel coating method. 2 nanocrystalline film, and then the TiO 2 The nanocrystalline film was fired in a muffle furnace at 600 °C for 5 h, and cooled to room temperature to obtain TiO 2 Nanocrystalline film;

[0032] 2) TiO 2 Preparation of micro-nano composite structure film:

[0033] Tubular micron / submicron TiO 2 Dissolve in dehydrated ethanol, the concentration that obtains solution is 1g / mL, adopt scalpel coating method with gained solution, the TiO prepared in step 1) 2 Fabrication of micron / submicron tubular TiO on the surface of nanocrystalline film 2 film, and then bake it in a muffle furnace at 600°C for 5h, and cool to room temperature to obtain TiO 2 Micro-nano composite structure film.

[0034] From image ...

Embodiment 3

[0036] 1) Preparation of ZnO nanocrystalline film:

[0037] 0.1g ZnO nanocrystals are added into 100ml of absolute ethanol to obtain a milky white solution after ultrasonic dispersion, and the ZnO nanocrystals film is prepared on the pretreated FTO conductive glass by the drop coating method, and then the ZnO nanocrystals film is placed in a muffle furnace at 250 ℃, roasted for 0.2h, cooled to room temperature to obtain ZnO nanocrystalline film;

[0038] 2) Preparation of ZnO micro-nano composite thin film

[0039] Dissolve flaky micron / submicron ZnO in absolute ethanol to obtain a solution with a concentration of 0.001g / mL, and prepare a layer of large particle micron / submicron ZnO film on the surface of ZnO nanocrystalline film by drop coating method, which will have a micron The ZnO double-layer film with nano-composite structure was placed in a muffle furnace and baked at 250°C for 0.2h, and then cooled naturally to room temperature to obtain a ZnO micro-nano composite fi...

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Abstract

The invention provides a method for preparing a semiconductor oxide micro-nano composite structural film, which belongs to the technical field of inorganic nonmetal material technology and energy material preparation. A one-step method for preparing the semiconductor oxide micro-nano composite structural film has poor reliability and repetitiveness. The method adopts a drop coating method or a coating method to sequentially prepare a semiconductor oxide nanocrystalline film and a mircri / submicro semiconductor oxide film on conductive glass, so as to obtain the semiconductor oxide micro-nano composite structural film with a thickness of between 3 and 25 mu m, wherein the thickness ratio of the semiconductor oxide nanocrystalline film to the mircri / submicro semiconductor oxide film is 100-1:1. The method has the advantages of simple process, and strong reliability and repetitiveness, and is suitable for industrial production.

Description

technical field [0001] The invention belongs to the technical field of inorganic non-metallic material technology and energy material preparation, and specifically relates to a semiconductor inorganic material used as a photoanode film material of a dye-sensitized solar cell and a preparation method thereof, in particular to a semiconductor oxide micro-nano composite structure The method of film preparation. Background technique [0002] With the development of economy and the progress of human society, countries all over the world are facing two major problems of energy crisis and environmental pollution. The development of cheap, clean, environment-friendly and renewable new energy has become a hot research field at present. Compared with fossil fuels, nuclear energy, water energy and wind energy, solar energy is an inexhaustible and low-cost green energy source, and the development and utilization of solar energy has attracted more and more attention from various countri...

Claims

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Application Information

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IPC IPC(8): H01G9/20H01G9/04H01G9/022
Inventor 陶霞郑言贞许辉王立新陈建峰
Owner BEIJING UNIV OF CHEM TECH
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