TFT-LCD pixel structure and method for manufacturing same

Abstract

The invention relates to a TFT-LCD pixel structure and a manufacturing method thereof. The pixel structure comprises a thin film transistor, a grid line, a data line and a pixel electrode. A shading structural layer for shading light from a liquid crystal layer is formed above a channel area in the thin film transistor. The manufacturing method comprises the following steps: forming a grid electrode and the grid line on the base plate; continuously depositing a grid insulating layer, an amorphous silicon thin film and an n <+> amorphous silicon film, so as to form an amorphous silicon layer and an n <+> amorphous silicon layer; forming the data line and a source drain electrode layer; depositing a passivation layer; and forming the shading structural layer for shading the light from the liquid crystal layer above the channel area by an incineration processing technique after the half exposure and the wet etching while forming the pixel electrode. Through constructing the shading structural layer above the channel area in the thin film transistor, the invention achieves to shade the channel area in the thin film transistor, thereby effectively reducing the effect of the light from the liquid crystal layer on the amorphous silicon layer and the drain current and improving the transfer characteristic and the quality of images.

Description

technical field [0001] The invention relates to a thin film transistor liquid crystal display, in particular to a thin film transistor liquid crystal display pixel structure and a manufacturing method thereof. Background technique [0002] Thin Film Transistor Liquid Crystal Display (TFT-LCD for short) has the characteristics of small size, low power consumption, and no radiation, and occupies a dominant position in the current flat panel display market. For TFT-LCD, the structure and manufacturing process of the thin film transistor (TFT) determine the product performance, wherein, the leakage current I OFF It is one of the technical indicators of TFT characteristics, the smaller the better in theory. [0003] Figure 12 It is a schematic diagram of a TFT-LCD pixel structure in the prior art, Figure 13 for Figure 12 Middle C-C sectional view, Figure 14 for Figure 12 Middle D-D cross-sectional view, manufactured by the current mainstream 5 mask (5mask) or 4 mask (4mas...

AI Technical Summary

Problems solved by technology

But in fact, although the above-mentioned array substrate structure in the prior art protects the light-sensitive amorphous silicon semiconductor from the light from the backlight by setting an opaque gate electrode structure at the bottom, the passivation layer on the top layer generally uses SiNx , SiNx is a transparent material, so it cannot block the light from the liquid crystal layer, resulting in leakage current I OFF Improve, reduce picture quality

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