Cu-In-Ga-Se or Cu-In-Al-Se solar cell absorption layer target material and preparation method thereof

Abstract

The invention discloses a Cu-In-Ga-Se or Cu-In-Al-Se solar battery absorbing layer target pertaining to the field of photoelectric functional materials, and a preparation method thereof. High-purity cuprous selenide powder, indium selenide powder, gallium selenide powder or aluminum selenide powder are fully mixed evenly according to the stoichiometric ratio of a CuIn1-xGaxSe2 or CuIn1-xAlxSe2 solar battery absorbing layer, and then sintered and molded by hot-pressing under protective atmosphere or made into a biscuit after cold press molding or cold isostatic pressing, and the biscuit is sintered under protective atmosphere and certain pressure or does not go through pressure sintering. The technique of the invention is simple and convenient, has high efficiency and low cost, and the produced sputtering target is provided with uniform composition and homogeneous CuIn1-xGaxSe2 or CuIn1-xAlxSe2 phase, with the relative density more than 90 percent and stable performance. The invention is mainly applied to the preparation of a Cu-In-Ga-Se and Cu-In-Al-Se solar thin film battery absorbing layer.

Description

technical field [0001] The invention belongs to the field of photoelectric functional materials, in particular to a copper indium gallium selenium or copper indium aluminum selenium solar cell absorption layer target material and a preparation method thereof Background technique [0002] Copper indium selenide (CIS) thin-film solar cells have the characteristics of high photoelectric conversion rate, low cost, no performance attenuation, long life, and flexible substrates. It is one of the most promising photovoltaic cell technologies and is very promising in the future. obtain large-scale application. Copper indium selenide (CuInSe) with a chalcopyrite structure 2 ) with a bandgap width of 1.04eV, which is not a semiconductor material for optimum efficiency. Ga, Al, and In belong to Group III elements. Doping an appropriate amount of Ga in CIS, partially replacing In, forms CuIn 1-x Ga x Se 2 (CIGS) The bandgap width is continuously adjustable in the range of 1.04-1.67e...

AI Technical Summary

Problems solved by technology

There are two methods for selenization, one is to introduce H into the vacuum heat treatment furnace chamber 2 Se undergoes a chemical vapor phase reaction method, but due to the H 2 Se is a highly toxic and flammable gas, so this method is difficult to promote; the other is to pass solid selenium vapor into the vacuum heat treatment furnace chamber, and at a certain temperature, Se atoms react with Cu, In, and Ga atoms in the alloy prefabricated layer to form CIGS film

However, in the process of selenization, it is necessary to rapidly raise the temperature and cross the temperature range of 300-450 ° C, because it is easy to generate Ga in this temperature range, which is easy to volatilize. 2 Se, In 2 Se alloy phase, causing the loss of In and Ga elements in the CIGS film, affecting the performance of the film

However, the rapid heating and selenization temperature above 550°C will easily cause the temperature difference between the upper and lower substrates, resulting in softening or warping. For large-area glass substrates, it will also easily cause cracks, which will affect the process implementation and industrial production [Marianna Kemell, et.al ,Thin Film Deposition Methods for CuInSe 2 SolarCells, Critical Reviews in Solid State and Materials Sciences, 2005, 30, p1-31; F. Kessler, et.al, Approaches to flexible CIGS thin-film solarcells, Thin Solid Films, 2005, 480-481, p491-498]