GaN base spinning LED and preparation method thereof

Abstract

The invention provides a GaN group spin luminescent diode (Spin-LED), which is formed form orderly arranging the following structures on a conducting substrate: a P type ohmic contact electrode, a P type GaN layer, an InGaN / GaN multiple quantum well active layer, a N type GaN layer, an ITO magnetic layer which is doped with transient metallic elements, and a N type ohmic contact electrode, wherein the GaN group Spin-LED is prepared through taking the ITO group magnetic layer as a spin injection source and combining the original and the existing GaN group LED lighting techniques, compared with the complex preparing process which combines a plurality of producing techniques of a GaMnN group Spin-LED which is provided at present, the method is characterized by arranging the magnetic layer on a transparent electrode part instead, the preparation method is simple and easy to carry out, and various novel spin luminescent diodes can be flexibly and rapidly obtained, and the detecting of the spin injection efficiency can be effectively carried out, simultaneously, the Spin-LED further can be used for researching and designing other various spin electronic devices.

Description

technical field [0001] The invention belongs to the field of spin electronics and relates to a spin light-emitting diode (Spin-LED) prepared based on ITO magnetic electrode technology. Background technique [0002] Spintronic devices have the advantages of low consumption, fast speed, non-volatility, and high integration density, making them widely used in magnetic sensors, high-density non-volatile memories, optical isolators, semiconductor integrated circuits, semiconductor lasers, and spin quantum computers. and other fields have broad application prospects. The field of spintronics is therefore expected to play an important role in the development of next-generation electronic devices. [0003] Diluted magnetic semiconductors (DMS) are important materials in the field of spintronics. However, traditional DMS, such as GaMnAs, has limited the application of devices operating at room temperature due to its low Curie temperature. Since 2000, T.Dietl et al. used the Zenner...

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Problems solved by technology

[0004] Scientists also try to use GaMnN semiconductor materials to design Spin-LED devices, but because Mn forms a deep main energy level in GaN, the electrical properties such as carrier concentration and mobility of Mn-doped GaN materials are difficult to meet the needs of devices. requirements

At the same time, this method has many steps for material growth, requires the cross-use of multiple growth technologies, and has a long cycle and high technical difficulty.

The preparation of GaN-based Spin-LEDs using GaMnN dilute magnetic semiconductor materials has encountered certain challenges, and practical GaMnN-based Spin-LEDs have not been reported yet.

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