Organic polymer electronic memory manufacturing method

A polymer and memory technology, applied in semiconductor/solid-state device manufacturing, electrical solid-state devices, circuits, etc., to achieve good solubility and film-forming properties, good stability, and simplified preparation and implementation processes

Active Publication Date: 2010-07-28
SUZHOU UNIV
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] But so far, there is no literature report on the use of azo polymers in electric memory.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Organic polymer electronic memory manufacturing method
  • Organic polymer electronic memory manufacturing method
  • Organic polymer electronic memory manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] First, the cut ITO glass sheet is ultrasonically washed with water for 15-30 minutes, and then ultrasonically washed with acetone and isopropanol 3 times, each time for 15-20 minutes. Remove the glass pieces and blow dry and set aside.

[0042] The azo polymer (PNAzo) with an average molecular weight of 3800 and a nitro group at the end is formulated into a solution of N,N-dimethylacetamide at an amount of 10-15mg / ml, and spin-coated Azo polymer is coated on the surface of ITO glass (rotating speed is 1500-2000 rpm, 60 seconds), and placed in a vacuum oven (1×10 -5 torr, 60°C) and dried for 10 hours to obtain a uniform azo polymer film. The thickness of the polymer film is about 50 nm.

[0043] Finally, use a vacuum evaporation instrument to measure less than 1×10 -7 Under the vacuum of torr, high-purity Al with a thickness of about 150nm and an area of ​​0.4×0.4mm is vaporized as the upper electrode. The vapor deposition rate of the Al electrode is controlled at 1-3nm / s. ...

Embodiment 2

[0048] The cut ITO glass slide is ultrasonically washed with water for 15-30 minutes, and then ultrasonically washed with acetone and isopropanol 3 times for 15-20 minutes each time. Remove the glass piece and blow dry.

[0049] Azo polymer (PBAzo) with an average molecular weight of 4700 and a bromine group at the end substituent is prepared into a solution of N,N-dimethylacetamide at an amount of 10-15mg / ml, and spin-coated. Coat the azo polymer on the surface of the ITO glass (rotating speed is 1500-2000 rpm, 60 seconds), and place it in a vacuum oven (1×10 -5 torr, 60°C) and dried for 10 hours to obtain a uniform azo polymer film. The thickness of the polymer film is approximately 60 nm.

[0050] Finally, use a vacuum evaporation instrument to measure less than 1×10 -7 Under the vacuum of torr, high-purity Al with a thickness of about 180nm and an area of ​​0.4×0.4mm is vaporized. As the upper electrode, the vapor deposition rate of the Al electrode is controlled at 1-3nm / s, a...

Embodiment 3

[0053] The cut ITO glass slide is ultrasonically washed with water for 15-30 minutes, and then ultrasonically washed with acetone and isopropanol 3 times for 15-20 minutes each time. Remove the glass pieces and blow dry and set aside.

[0054] An azo polymer (PMAzo) with an average molecular weight of 5000 and a methoxy group as the terminal substituent is prepared into a solution of N,N-dimethylacetamide at an amount of 10-20mg / ml, and the solution is spin-coated Azo polymer is coated on the surface of ITO glass (rotating speed is 1500-2000 rpm, 60 seconds), and placed in a vacuum oven (1×10 -5 torr, 60°C) and dried for 10 hours to obtain a uniform azo polymer film. The thickness of the polymer film is about 80 nm.

[0055] Finally, use a vacuum evaporation instrument to measure less than 1×10 -7 Under the vacuum degree of torr, high-purity Al with a thickness of about 160nm and an area of ​​0.4×0.4mm is vaporized. As the upper electrode, the vapor deposition rate of the Al elect...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses an organic polymer electronic memory which comprises an upper electrode, a lower electrode and an organic polymer layer arranged between the upper electrode and the lower electrode, wherein, the upper electrode is made from aluminum, the lower electrode is made from nanometer indium tin metal oxide, and the organic polymer is chosen from an azo polymer which is obtained byfree radical polymerization of one of acrylate azo monomers which takes nitryl or bromine substituent or methoxy group as a terminal substituent group, and the average molecular weight of the azo polymer is 2500-15000. The azo polymer memory device has the advantages of simple structure and preparation process, rapid storage speed and good stability; and the storage classes of the azo polymer device can be correspondingly adjusted by adjusting the terminal substituent group of the azo polymer.

Description

Technical field [0001] The invention relates to an electronic memory, in particular to an organic polymer memory and a manufacturing method thereof. Background technique [0002] The increasing development of information technology poses severe challenges to the storage capacity of information materials. How to make terminal products light, thin, short, and small has become an urgent problem in the semiconductor industry. [0003] Due to the limitation of storage capacity, traditional semiconductor materials such as Si, Ge and GaAs are about to be replaced by some electroactive organic and polymer materials. [0004] Organic polymer storage technology has emerged, and a variety of new storage technologies and devices have been born. Recently, flash memory type (Flash) and write once read many read (WORM) polymer storage materials have attracted attention due to their simple structure, measurable, low loss, and large data storage capacity. [0005] In the prior art, a WORM-type organi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/05H01L51/30H01L51/40
Inventor 路建美李娜君徐庆锋
Owner SUZHOU UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap