Organic polymer electronic memory and manufacturing method therefor

A polymer and memory technology, which is used in the manufacture of semiconductor/solid-state devices, electric solid-state devices, circuits, etc., to achieve the effects of good solubility and film-forming properties, good stability, and simplified preparation and implementation process

Active Publication Date: 2009-01-07
SUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] But so far, there is no literature report on the use of azo polymers in electric memory.

Method used

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  • Organic polymer electronic memory and manufacturing method therefor
  • Organic polymer electronic memory and manufacturing method therefor
  • Organic polymer electronic memory and manufacturing method therefor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] Firstly, the cut ITO glass sheet is ultrasonically washed with water for 15-30 minutes, and then ultrasonically washed with acetone and isopropanol for 3 times, each time for 15-20 minutes. Remove the glass slices and blow dry for later use.

[0042] The average molecular weight is 3800, and the azo polymer (PNAzo) whose terminal substituent is nitro is formulated into a solution of N, N-dimethylacetamide in an amount of 10-15 mg / ml, and the The azo polymer is coated on the surface of ITO glass (1500-2000 rpm, 60 seconds), and placed in a vacuum oven (1×10 -5torr, 60°C) for 10 hours to obtain a uniform azo polymer film. The thickness of the polymer film is about 50 nm.

[0043] Finally, use a vacuum evaporator at less than 1×10 -7 Under the vacuum degree of torr, high-purity Al with a thickness of about 150 nm and an area of ​​0.4×0.4 mm is evaporated as the upper electrode. The evaporation rate of the Al electrode is controlled at 1-3nm / s.

[0044] attached figur...

Embodiment 2

[0048] The cut ITO glass slides were ultrasonically washed with water for 15-30 minutes, and then ultrasonically washed with acetone and isopropanol for 3 times, each time for 15-20 minutes. Remove the glass piece and blow dry.

[0049] The average molecular weight is 4700, and the azo polymer (PBAzo) whose terminal substituent is a bromine group is formulated into a solution of N,N-dimethylacetamide in an amount of 10-15mg / ml, and the method of spin coating Apply the azo polymer on the surface of ITO glass (1500-2000 rpm, 60 seconds), put it in a vacuum oven (1×10 -5 torr, 60°C) for 10 hours to obtain a uniform azo polymer film. The thickness of the polymer film is about 60nm.

[0050] Finally, use a vacuum evaporator at less than 1×10 -7 Under the vacuum degree of torr, high-purity Al with a thickness of about 180nm and an area of ​​0.4×0.4mm is evaporated. As the upper electrode, the evaporation rate of the Al electrode is controlled at 1-3nm / s, and the structure is as f...

Embodiment 3

[0053] The cut ITO glass slides were ultrasonically washed with water for 15-30 minutes, and then ultrasonically washed with acetone and isopropanol for 3 times, each time for 15-20 minutes. Remove the glass slices and blow dry for later use.

[0054] The average molecular weight is 5000, and the azo polymer (PMAzo) whose terminal substituent is methoxy is formulated into a solution of N, N-dimethylacetamide in an amount of 10-20 mg / ml, and the The azo polymer is coated on the surface of ITO glass (1500-2000 rpm, 60 seconds), and placed in a vacuum oven (1×10 -5 torr, 60°C) for 10 hours to obtain a uniform azo polymer film. The thickness of the polymer film is about 80nm.

[0055] Finally, use a vacuum evaporator at less than 1×10 -7 Under the vacuum degree of torr, high-purity Al with a thickness of about 160nm and an area of ​​0.4×0.4mm is evaporated. As the upper electrode, the evaporation rate of the Al electrode is controlled at 1-3nm / s, and the structure is as attache...

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Abstract

The invention discloses an organic polymer electronic memory which comprises an upper electrode, a lower electrode and an organic polymer layer arranged between the upper electrode and the lower electrode, wherein, the upper electrode is made from aluminum, the lower electrode is made from nanometer indium tin metal oxide, and the organic polymer is chosen from an azo polymer which is obtained by free radical polymerization of one of acrylate azo monomers which takes nitryl or bromine substituent or methoxy group as an terminal substituent group, and the average molecular weight of the azo polymer is 2,500-15,000. The azo polymer memory device has the advantages of simple structure and preparation process, rapid storage speed and good stability; and the storage classes of the azo polymer device can be correspondingly adjusted by adjusting the terminal substituent group of the azo polymer.

Description

technical field [0001] The invention relates to an electronic memory, in particular to an organic polymer memory and a manufacturing method thereof. Background technique [0002] The increasing development of information technology poses severe challenges to the storage capacity of information materials. How to make terminal products light, thin, short and small has become an urgent problem to be solved in the semiconductor industry. [0003] Due to the limitation of storage capacity, traditional semiconductor materials such as Si, Ge and GaAs are about to be replaced by some electrically active organic and polymer materials. [0004] Organic polymer storage technology stands out, and a variety of new storage technologies and devices have been born one after another. Recently, flash memory (Flash) and write-once-read-many (WORM) polymer storage materials have attracted much attention due to their advantages of simple structure, measurability, low loss and large data storage...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/05H01L51/30H01L51/40
Inventor 路建美李娜君徐庆锋
Owner SUZHOU UNIV
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