BICMOS circuit buried layer epitaxial method by cylinder epitaxial furnace

An epitaxial furnace and barrel-type technology, which is applied in the manufacture of circuits, electrical components, semiconductors/solid-state devices, etc., can solve the problems that cannot meet the performance requirements of VLSI systems, power consumption and integration can not meet the needs of VLSI technology development, etc., to achieve The effect of high productivity

Active Publication Date: 2008-12-31
SHANGHAI SIMGUI TECH
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AI Technical Summary

Problems solved by technology

Although the traditional bipolar technology has the advantages of high speed, strong current drive capability and high analog precision, its power consumption and integration level cannot meet the development needs of modern VLSI technology.
Although MOS devices and their circuits, which have always been the main technology platform of silicon integrated circuits, have incomparable advantages in high integration, low power consumption, and strong anti-interference ability, they are powerless in high-speed, high-current drive applications.
It can be seen that neither a single CMOS nor a single bipolar technology can meet the multi-faceted performance requirements of the VLSI system. Therefore, the BICMOS device and its circuit that combines the advantages of the two technologies are the inevitable product of the development of VLSI.

Method used

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  • BICMOS circuit buried layer epitaxial method by cylinder epitaxial furnace
  • BICMOS circuit buried layer epitaxial method by cylinder epitaxial furnace
  • BICMOS circuit buried layer epitaxial method by cylinder epitaxial furnace

Examples

Experimental program
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Effect test

Embodiment 1

[0036] Embodiment 1: Utilize barrel-type epitaxial furnace, grow N-type epitaxial layer under reduced pressure on pattern piece (PMOS, NMOS, NPN junction is formed on P-type substrate), obtain the BICMOS raw material of N-type epitaxy.

[0037] First, gradually raise the temperature of the barrel epitaxy furnace to the epitaxial growth temperature (1000℃~1200℃) at a certain rate (50-70℃ / min);

[0038] Then pass through HCl (flow rate 1-5L / min, corrosion time 2-5min) to corrode the graphic sheet, control the amount of corrosion removal, so as to obtain a better surface state suitable for subsequent treatment;

[0039] Then vacuumize the chamber so that the vacuum degree reaches 60-100 Torr, which meets the requirements of decompression epitaxial growth;

[0040] Then feed 700~800L / min SiH 2 Cl 2 and 150-180mL / min doping source PH3, epitaxy is carried out at a growth rate of 0.1-0.5um / min, through the main hydrogen flow rate (90-180L / min) and the rotating hydrogen flow rate (1...

Embodiment 2

[0043] Embodiment 2: Using a barrel epitaxy furnace, an intrinsic epitaxial layer is grown under reduced pressure on a pattern sheet (NMOS and NPN junctions are formed on a P-type substrate) to obtain an intrinsic epitaxial BICMOS raw material.

[0044] First, gradually raise the temperature of the barrel epitaxy furnace to the epitaxial growth temperature (1000℃~1200℃) at a certain rate (50-70℃ / min);

[0045] Then pass through HCl (flow rate 1-5L / min, corrosion time 2-5min) to corrode the graphic sheet, control the amount of corrosion removal, in order to obtain a better surface state;

[0046] Then vacuumize the chamber so that the vacuum degree reaches 60-100 Torr, which meets the requirements of decompression epitaxial growth;

[0047] Then feed 700~800L / min SiH 2 Cl 2, Intrinsic epitaxy at a growth rate of 0.1-0.5um / min, through the main hydrogen flow rate (90-180L / min), rotating hydrogen flow rate (10-50L / min), JET (nozzle) position and BMV of the epitaxial equipment ...

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Abstract

The invention relates to a preparation method which utilizes a cylinder epitaxial furnace to carry out buried layer epitaxy for preparing BICMOS circuits and belongs to the field of microelectronic technology, in particular to a new technology using the cylinder epitaxial furnace for preparing BICMOS raw materials, namely, a new preparation method thereof. Compared with the general preparation method by utilizing a single-wafer furnace, the novel preparation method not only can meet high requirements of preparation of the BICMOS circuits but also has the advantages of high yield and low cost, etc.

Description

technical field [0001] The invention relates to a new technology and a new preparation method for preparing BICMOS raw materials by using a barrel epitaxy furnace, which belongs to the manufacturing technology of semiconductor materials in microelectronics. Background technique [0002] In recent years, with the rapid development of hybrid microelectronics technology and the continuous expansion of its application fields, especially in the communication industry, the rapid development and application of computer systems, the electronics and communication industries have become increasingly concerned about modern electronic components (such as large-scale integrated circuits) , both VLSI), circuit miniaturization, high speed, low power supply voltage, low power consumption and cost-effectiveness and other aspects of the requirements are getting higher and higher. Although the traditional bipolar technology has the advantages of high speed, strong current driving capability an...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/82H01L21/822
Inventor 张峰陈浩杨建胡平龚利贤
Owner SHANGHAI SIMGUI TECH
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