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Composition and method for enhancing pot life of hydrogen peroxide-containing cmp slurries

A chemical-mechanical and hydrogen peroxide technology, applied in the field of chemical-mechanical polishing compositions, can solve the problems of increased manufacturing cost of semiconductor wafers and the like

Inactive Publication Date: 2008-12-03
CMC MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The limited lifetime stability of hydrogen peroxide-containing CMP slurries increases the manufacturing cost of semiconductor wafers due to the need to frequently replenish the amount of hydrogen peroxide in the slurry

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] This example demonstrates the effect of transition metal content of hydrogen peroxide-containing CMP slurries on service life.

[0031] The polishing composition (A-1) of the present invention was prepared by grinding alpha-alumina in deionized water with an alpha-alumina-based grinding media. The resulting CMP composition A-1 had an alpha-alumina content of 0.5% by weight. A conventional CMP composition (C-1) was prepared by grinding a slurry of alpha-alumina in deionized water using zirconia grinding media. Composition C-1 had an alpha-alumina content of 0.5% by weight. The transition metal content and the content of selected non-transition metal elements of each paste (A-1 and C-1) were determined by inductively coupled plasma spectrometry (ICP) and are shown in Table 1. Both slurries had pH values ​​in the range of 6-9.

[0032] Each slurry (A-1 and C-1) was combined with 1% by weight of hydrogen peroxide, respectively, and by monitoring each slurry under standar...

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PUM

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Abstract

A composition suitable for copper chemical-mechanical polishing (CMP) comprises an abrasive powder, such as a silica and / or alumina abrasive, in a liquid carrier. The composition has a transition metal content of less than about 5 parts per million (ppm), preferably less than about 2 ppm. Preferably the composition contains less than about 2 ppm of yttrium, zirconium, and / or iron. The CMP compositions, when combined with hydrogen peroxide, provide CMP slurries for copper CMP that have improved pot life by ameliorating hydrogen peroxide degradation in slurries.

Description

technical field [0001] The present invention relates to compositions and methods for chemical mechanical polishing (CMP). More particularly, the present invention relates to chemical mechanical polishing compositions containing relatively low levels of transition metal materials, and to the use of CMP compositions with hydrogen peroxide to provide oxidizing properties with improved pot life stability The method of CMP slurry. Background technique [0002] Compositions and methods for planarizing or polishing the surface of a substrate (eg, semiconductor wafer) are known in the art. Polishing compositions (also known as polishing slurries) typically contain abrasive materials in an aqueous solution and are applied to a surface by contacting the surface with a polishing pad saturated with the slurry composition. In addition, such slurries also typically utilize chemical additives that facilitate the removal of material from the substrate surface by chemically reacting with t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23F3/06H01L21/321C09G1/02
CPCC09G1/02C23F3/06H01L21/3212H01L21/304C09K3/14
Inventor 王育群陆斌约翰·帕克罗杰·马丁
Owner CMC MATERIALS INC
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