High reflection film of silicon carbide reflection mirror within visible light wave range, and its production method
A technology of internal silicon carbide and mirrors, which is applied in optics, mirrors, optical components, etc., can solve the problems of large difference in hardness and difficult processing of surface finish, and achieve high density, improve surface finish, and improve reflectivity.
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Embodiment 1
[0026] See the high-reflection film of the silicon carbide mirror in the light band, and use the reaction sintering method to prepare the mirror body with complex shape, and perform basic mechanical processing and surface treatment on the mirror, and then follow the following steps:
[0027] a. Clean the surface of the mirror;
[0028] b. Coating with magnetron sputtering equipment;
[0029] c. Refining the reflective film layer;
[0030] By cyclically repeating the above steps a, b, and c, and replacing the target material in the coating, respectively perform single crystal silicon or polycrystalline silicon dense layer deposition, Ni-Cr alloy transition layer deposition, and reflective layer Ag film deposition protective layer film SiO 2 Deposition, so as to prepare a highly reflective film system composed of four layers of silicon film dense layer, transition layer, reflective layer and protective layer with high surface density.
Embodiment 2
[0032] In the process of processing the high-reflection film of the silicon carbide mirror in the visible light band described in Example 1, the cleaning of the mirror is first cleaned and milled, and then it is put into a large ultrasonic cleaning machine for cleaning. Remove surface attachments, machine with a grinder, process with a light knife for 10 minutes, rinse with deionized water after cleaning, and perform final cleaning with pure ethanol, and use air-drying equipment to speed up its drying speed.
Embodiment 3
[0034] The above-mentioned high-reflection coating of silicon carbide mirrors in the visible light band, the coating is to place the mirror body in the magnetron sputtering equipment, and use single crystal silicon or polycrystalline silicon layer deposition or Ni-Cr alloy or Ag or SiO 2 As a target, particle bombardment is carried out on the mirror body, and the vacuum is started to 10 -4 Pa, filled with Ar gas to make the pressure reach 1Pa. First raise the temperature of the silicon carbide mirror to 500°C, and then bombard it with an ion beam. After this process lasts for 30 minutes, lower the temperature of the mirror to 200°C and start deposition. The deposition power is 150W. The time is 2.5 hours. The film obtained in this way can meet the design requirements.
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