Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Doped graphene and method for preparing same

A graphene and doping element technology is applied in the field of doped graphene and its preparation, and achieves the effects of good quality and convenient operation of the preparation method

Inactive Publication Date: 2010-09-01
INST OF CHEM CHINESE ACAD OF SCI
View PDF0 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The graphene prepared by these methods is basically intrinsic graphene, and there is no related report on doped graphene.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Doped graphene and method for preparing same
  • Doped graphene and method for preparing same
  • Doped graphene and method for preparing same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Embodiment 1, preparation nitrogen-doped graphene

[0036] In the first step, the silicon substrate is ultrasonically cleaned with deionized water, ethanol, and acetone in sequence, and then dried in an oven, and then through physical vapor deposition technology (that is, placing the quartz tube with zinc sulfide powder in a tubular electric furnace and heating it to 950 Celsius, feed 100sccm of argon as a carrier gas, zinc sulfide will be deposited on the silicon chip placed in the low temperature zone) Deposit a layer of zinc sulfide with a thickness of about 100 nanometers on the surface of the silicon substrate as a catalyst (scanning electron microscope photo Such as figure 2 shown);

[0037] In the second step, the substrate deposited with zinc sulfide is placed in the middle of a clean quartz tube, and the quartz tube is placed in the electric furnace so that the middle of the quartz tube is located in the central area of ​​the electric furnace, and then 100 sc...

Embodiment 2

[0041] Embodiment 2, preparation nitrogen-doped graphene

[0042] The preparation method is basically the same as in Example 1, and the difference is that the first step adopts the vacuum thermal evaporation method (evaporating by a vacuum coater) to deposit a layer of silver with a thickness of 30 nanometers on the silicon substrate surface as a catalyst; the fifth step Place the substrate deposited with nitrogen-doped graphene in a quartz tube, and evacuate to 0.1 Torr at the same time, raise the temperature of the tube furnace where the quartz tube is placed to 1000°C, close the tube furnace after 30 minutes of treatment, and slowly cool down to room temperature . The scanning electron microscope photo after the fifth step processing is as follows Figure 8 As shown, the formation of two-dimensional film-like doped graphene can be observed from the figure.

Embodiment 3

[0043] Embodiment 3, preparation nitrogen-doped graphene

[0044] The preparation method is basically the same as in Example 1, except that the first step adopts a vacuum thermal evaporation method (evaporating by a vacuum coater) to deposit a layer of 30 nanometer silver on the surface of a silicon substrate as a catalyst; the third step is when When the temperature in the central area of ​​the electric furnace reaches 750°C, at this time, pyridine is introduced into the carrier gas as a carbon source and a nitrogen source, and the reaction begins; the fourth step is to stop the introduction of pyridine after 10 minutes of reaction, and turn off the electric furnace at the same time, and continue A gas mixture of 100 sccm hydrogen and 100 sccm argon was introduced to bring the temperature down to room temperature. The fifth step is to place the substrate deposited with doped graphene in a quartz tube, and at the same time evacuate to 0.1 torr, raise the temperature of the tub...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a doped graphene and a preparation method thereof. The doped graphene is prepared by adopting a chemical vapor deposition method, which comprises the steps as follows: a substrate with catalyst is put into a reaction kettle without oxygen, with the temperature of the substrate being 500 DEG C to 1200 DEG C; then material with carbon element and doped elements is piped intothe reaction kettle, and the doped graphene is obtained; wherein, the catalyst is metal or metallic compound. The doped graphene prepared by the invention has good quality, and the preparation methodis simple and feasible and can be conveniently operated and used for large-scale production.

Description

technical field [0001] The invention relates to a doped graphene and a preparation method thereof. Background technique [0002] Since its discovery, graphene has become a rising star in condensed matter physics and materials science, attracting a lot of attention. Graphene is a new carbonaceous material with a two-dimensional honeycomb lattice structure formed by densely packed carbon atoms, with a thickness of one or more atomic layers, which is only one-two-thousandth of hair. It is the basic unit for constructing other dimensional carbonaceous materials (such as zero-dimensional fullerenes, one-dimensional carbon nanotubes, and three-dimensional graphite). According to the number of layers, it can be divided into one or more layers of graphene. Perfect graphene consists only of hexagonal cells (equal hexagons); if pentagonal and heptagonal cells are present, then they constitute graphene defects. Theoretical research on graphene has a history of more than 60 years, an...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C01B31/02
Inventor 刘云圻魏大程王钰张洪亮黄丽平于贵
Owner INST OF CHEM CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com