Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Magnetic multilayer film with geometrical shape and preparation method and application thereof

A geometric shape and multi-layer film technology, applied in the application of magnetic film to substrate, magnetic layer, magnetic recording, etc., can solve the problems of bit layer reversal field and power consumption reduction

Active Publication Date: 2008-07-16
INST OF PHYSICS - CHINESE ACAD OF SCI
View PDF0 Cites 23 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But the inversion field and power consumption of its bit layer are still not reduced to an ideal and expected minimum value

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Magnetic multilayer film with geometrical shape and preparation method and application thereof
  • Magnetic multilayer film with geometrical shape and preparation method and application thereof
  • Magnetic multilayer film with geometrical shape and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0099] A non-pinning regular hexagonal closed ring magnetic multilayer film was prepared by microfabrication.

[0100] On high-vacuum magnetron sputtering equipment, 1mm thick SiO after cleaning by conventional methods 2 / Si substrate, using the conventional coating method to sequentially deposit Au with a thickness of 2nm as the lower buffer conductive layer 1, Co with a thickness of 3nm as the hard magnetic layer 2, Cu with a thickness of 1nm as the intermediate layer 3, and Co with a thickness of 1nm. As the soft magnetic layer 4 and Ru with a thickness of 4 nm as the capping layer 5 . The growth conditions of the above-mentioned magnetic multilayer film: prepared vacuum: 5×10 -7 Pa; high-purity argon gas pressure for sputtering: 0.07 Pa; sputtering power: 120 watts; sample holder rotation rate: 20rmp; growth temperature: room temperature; rate; and when depositing the hard magnetic layer 2 and the soft magnetic layer 4, a 150Oe plane induced magnetic field was applied. ...

Embodiment 2～7

[0102] According to the same method as in Example 1, a non-pinning regular pentagonal closed-loop magnetic multilayer film was prepared by microprocessing. The materials and thicknesses of each layer of the magnetic multilayer film are listed in Table 1.

[0103] Table 1. The structure of the non-pinning regular pentagonal closed ring magnetic multilayer film prepared by the micromachining method of the present invention

[0104]

[0105]

Embodiment 8

[0107] Fabrication of Pinned Regular Hexagonal Closed Ring Magnetic Multilayers by Microfabrication

[0108] Using high vacuum magnetron sputtering equipment to clean 0.8mm thick Si / SiO by conventional methods 2 Au lower buffer conductive layer 1 with a thickness of 2nm, an IrMn antiferromagnetic pinning layer 8 with a thickness of 10nm, and a Co with a thickness of 3nm were sequentially deposited on the substrate. 90 Fe 10 Pinned magnetic layer 9; then deposited 1nm thick Al, and an insulating layer formed by plasma oxidation for 50 seconds was used as the intermediate layer 3; on the intermediate layer 3, deposited a thickness of 3nm Co 90 Fe 10 A soft magnetic layer 4 and an Au capping layer 5 with a thickness of 2 nm. The growth conditions of the above-mentioned magnetic multilayer film: prepared vacuum: 5×10 -7 Pa; high-purity argon gas pressure for sputtering: 0.07 Pa; sputtering power: 120 watts; sample holder rotation rate: 20rmp; growth temperature: room temperatu...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
widthaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a magnetic multiplayer film with geometric shape, comprising all layers of a magnetic multiplayer film unit deposited on a substrate, wherein the cross section of the magnetic multiplayer film unit is polygonal closing ring shaped, magnetic moments or magnetic fluxes of film layers with ferromagnetism in the magnetic multiplayer film unit become in a clockwise or counter clockwise closing state; the invention also comprises a metal core arranged on the geometric center of the polygonal closed ring shaped magnetic multiplayer film, wherein the cross section of the metal core is a corresponding polygon; the invention also relates to a magnetic storage made of the magnetic multiplayer film which comprises(or does not comprise) the metal core; in the invention, the closing shape magnetic multiplayer film is prepared based on the micro processing method; the closing with(or without) metal core polygonal closing ring shaped magnetic multiplayer film is widely applicable to devices which takes the magnetic multiplayer film such as magnetic random access memory, computer magnetic reading head, magneto-dependent sensor, magnetic logic device and self-rotation transistor, etc. as the core.

Description

technical field [0001] The present invention relates to a preparation method and application of a magnetic multilayer film, in particular to a magnetic multilayer film with polygonal closed rings such as triangles, pentagons, hexagons, octagons, decagons, and hexagons. Multilayer film, and polygonal closed ring magnetic multilayer film such as triangular, pentagonal, hexagonal, octagonal, decagonal, hexagonal containing metal core and their preparation method, and based on these Magnetic random access memory (MRAM) of closed ring magnetic multilayer film and its control method. Background technique [0002] Since the magnetoresistance effect can be widely applied to magnetoresistance sensors, magnetic recording and reading heads, etc., the giant magnetoresistance effect (Giant Magneto Resistance, GMR) was first observed by Baibich et al. in a magnetic multilayer film system in the late 1980s ), the research on the magnetic multilayer film system has always been a subject of...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01F10/08H01F41/14G11B5/673
Inventor 韩宇男温振超杜关祥赵静刘东屏韩秀峰
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com