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Silicon based LCD micro- display and method for forming same

A micro-display and silicon-based liquid crystal technology, applied in the field of semiconductors, can solve the problems of large influence of adjacent units and difficult monolithic structure, and achieve the effect of small mutual influence and small interference effect

Active Publication Date: 2008-07-02
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The problem solved by the invention is that in the existing silicon-based liquid crystal microdisplay technology, the microreflector adopts a rectangular shape, which is not easy to be made into a monolithic structure, and at the same time, the influence between adjacent units is large

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  • Silicon based LCD micro- display and method for forming same
  • Silicon based LCD micro- display and method for forming same
  • Silicon based LCD micro- display and method for forming same

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Embodiment Construction

[0025] The essence of the present invention is to provide a silicon-based liquid crystal microdisplay and its forming method, the micro-mirror of the silicon-based liquid crystal microdisplay is a honeycomb regular hexagon, the pixel switch circuit layer of the silicon-based liquid crystal microdisplay provided by the present invention The random access memory composed of MOS transistors and capacitors can also be other forms of static random access memory circuits or pixel switch circuits composed of address selection diodes, and the scope of protection of the present invention should not be limited too much here.

[0026] Below by describing specific embodiment in detail according to accompanying drawing, above-mentioned object and advantage of the present invention will be clearer:

[0027] Firstly, a method for forming a silicon-based liquid crystal microdisplay unit is given. A pixel switch circuit layer and an intermetal insulating layer are formed on a silicon substrate,...

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Abstract

The invention relates to a formation method of a silicon-based liquid crystal micro-display, which comprises the following steps: a pixel switch circuit layer is formed on a silicon substrate; a light shielding layer and an intermetallic insulation layer are formed in turn on the pixel switch circuit layer; a metal reflection layer is formed on the insulation layer; and the metal reflection layer is etched to form a separated hexagonal micro-reflection mirror array. Accordingly, the invention provides a silicon-based liquid crystal micro-display. The micro-reflection mirrors of the invention are hexagon-shaped; since three micro-reflection mirrors border upon each other, the invention is easy to form a monolithic structure; and since the inner angle of the hexagon is 120 degrees, the shape is nearly a circle, the adjacent micro-reflection mirrors have smaller interaction due to the interference effect, thereby reducing the phenomenon of optical crosstalk.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a silicon-based liquid crystal microdisplay and a forming method thereof. Background technique [0002] In recent years, many new technologies have emerged in the liquid crystal (LCD) industry, among which the more popular technology is the liquid crystal on silicon microdisplay (LCOS, Liquid Crystal on Silicon) technology. LCOS (LiquidCrystal on Silicon) is a new reflective micro LCD projection technology. Its structure is to grow a transistor on a silicon substrate, use a semiconductor process to make a drive panel (also known as CMOS-LCD), and then transmit it on the transistor. Grinding technology grinds it flat, and coats it with aluminum as a micro-mirror to form a CMOS substrate. Then, the CMOS substrate is bonded to the glass substrate containing transparent electrodes, and then liquid crystal is injected for packaging and testing. [0003] Generally speaking, LCOS displays...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/1362G02F1/136H01L21/822H01L27/04
Inventor 黄河高大为蒲贤勇
Owner SEMICON MFG INT (SHANGHAI) CORP
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