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Stripping preparation method of graphics platinum/titanium metal thin film

A titanium metal and patterning technology, applied in semiconductor devices and other directions, can solve the problems of poor adhesion between metal films and substrates, and achieve the effects of good adhesion, reduced difficulty and simple equipment

Inactive Publication Date: 2008-03-05
INST OF ACOUSTICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a method for preparing patterned platinum / titanium metal film by high-temperature stripping method, which can overcome the use of photoresist as the stripping layer in common stripping technology. The preparation temperature is low (not too high), which causes the defect of poor adhesion between the metal film and the substrate

Method used

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  • Stripping preparation method of graphics platinum/titanium metal thin film
  • Stripping preparation method of graphics platinum/titanium metal thin film

Examples

Experimental program
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Effect test

Embodiment 1

[0033] 1) Clean the silicon substrate

[0034] Cleaning the silicon substrate 1 with an acid cleaning solution or an alkaline cleaning solution respectively, and then rinsing it with deionized water;

[0035] 2) Preparation of zinc oxide sacrificial layer

[0036] Using radio frequency sputtering equipment, prepare a 0.01 μm zinc oxide sacrificial layer 2 on the cleaned substrate 1; coat a positive photoresist on the surface of the zinc oxide 2, and use a negative version of the Pt / Ti metal film pattern to align the positive photoresist Resist photolithography exposure, using phosphoric acid as an etchant to wet pattern the sacrificial layer 3;

[0037] 3) Preparation of Ti metal film

[0038] Prepare a 0.05 μm Ti metal thin film layer 4 on the patterned sacrificial layer 3 by ion plating, and during the preparation process of the Ti metal thin film layer 4, the substrate 1 is heated to 150° C.;

[0039] 4) Preparation of Pt metal thin film

[0040] A 0.2 μm Pt metal thin ...

Embodiment 2

[0044] 1) Clean the potassium nitride substrate

[0045] Cleaning the potassium nitride substrate 1 with an acid cleaning solution or an alkaline cleaning solution respectively, and then rinsing it with deionized water;

[0046] 2) Preparation of zinc oxide sacrificial layer

[0047] Using DC sputtering equipment, prepare a 5 μm zinc oxide sacrificial layer 2 on the cleaned substrate 1; apply a negative photoresist on the surface of the zinc oxide sacrificial layer 2, and use the positive photoresist of the Pt / Ti metal thin film pattern Photolithographic exposure of the resist to form a sacrificial layer photoresist pattern; using phosphoric acid as an etching solution to wet-etch the patterned sacrificial layer 3;

[0048] 3) Preparation of Ti metal film

[0049] Prepare a 0.01 μm Ti metal thin film 4 on the patterned sacrificial layer 3 by using ion plating equipment, and the heating temperature of the substrate is 250°C;

[0050] 4) Preparation of Pt metal thin film

[...

Embodiment 3

[0055] 1) Clean the potassium arsenide substrate

[0056] Cleaning the potassium arsenide substrate 1 with an acid cleaning solution or an alkaline cleaning solution respectively, and then rinsing it with deionized water;

[0057] 2) Preparation of zinc oxide sacrificial layer

[0058] Coat positive photoresist on the silicon substrate 1 surface, utilize the negative version of Pt / Ti metal thin film pattern to positive photoresist photolithography exposure, or coat negative photoresist on the silicon substrate 1 surface, utilize The positive version of the Pt / Ti metal thin film pattern is exposed to the negative photoresist to form a photoresist pattern of the sacrificial layer;

[0059]Using radio frequency sputtering equipment, prepare a 10 μm zinc oxide sacrificial layer 2 on the substrate 1; use a conventional lift-off technique to pattern the sacrificial layer 3;

[0060] 3) Preparation of Ti metal film

[0061] A 0.1 μm Ti metal thin film 4 is prepared on the patterne...

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Abstract

This invention relates to a preparation method for peeling off patternized Pt / Ti films including: preparing a sacrifice layer on a chip, patternizing the sacrifice layer by a photoetching technology, etching the sacrifice layer at the place reserving the Pt / Ti metal film and reserving the sacrifice layer at the place where the Pt / Ti metal film is peeled off, preparing a Pt / Ti metal film on the patternized sacrifice layer and discharging the sacrifice layer to peel off a pattern of the film.

Description

technical field [0001] The invention relates to the technical field of patterning platinum / titanium (Pt / Ti) metal thin films, in particular to a method for preparing patterned platinum / titanium metal thin films by a high-temperature stripping method. Background technique [0002] Pt / Ti metal thin films are often used as electrodes in the manufacturing process of semiconductors and microelectromechanical systems, and the more commonly used one is used as electrodes for lead zirconate titanate (PZT) thin films. The role of Ti is to enhance the adhesion between Pt and the base material. At present, the patterning technologies of Pt / Ti metal thin films mainly include three types: wet etching, dry etching, and stripping. Since aqua regia is used as the etching solution in the wet etching of Pt, it is difficult to corrode patterns, and the introduction of aqua regia makes the compatibility of the process worse. Dry etching has the disadvantages of high equipment cost, difficult ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/28
Inventor 李俊红解述
Owner INST OF ACOUSTICS CHINESE ACAD OF SCI
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