Vertical BJT, manufacturing method thereof
A region and collector technology, applied in the field of vertical BJT and its manufacturing, can solve problems such as the best current gain of vertical BJT devices
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[0013] As shown in FIG. 3 , in the photodiode region, a red photodiode region 252 is formed in the first epitaxial layer 200 formed over the semiconductor substrate. The second epitaxial layer 210 is grown, and the second P-type epitaxial layer 210 is formed by implanting P-type ions into the second epitaxial layer 210 . The first plug 254 is formed by implanting high-concentration ions into the second P-type epitaxial layer 210 to connect the second P-type epitaxial layer 210 to the red photodiode region 252 for sending signals.
[0014] After forming a photoresist layer pattern on the second P-type epitaxial layer 210, a green photodiode region 256 is formed in the second P-type epitaxial layer 210 by partially implanting ions into the second P-type epitaxial layer 210. , grow a third epitaxial layer 220 on the second P-type epitaxial layer 210 including the green photodiode region 256 , and form an STI region 260 in the third epitaxial layer 220 to define an active region. ...
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