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Tellurium-cadmium-mercury infrared detector chip for preventing non-infrared radiation incidence plane response

A technology of infrared radiation and mercury cadmium telluride, which is applied in the direction of optical radiation measurement, instruments, measuring devices, etc., can solve the problems that cannot effectively solve defects and affect the detection performance of devices

Inactive Publication Date: 2007-10-10
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Claims
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Problems solved by technology

Later, after our research, we found that although side passivation can solve the thermal stability of the device and anti-environmental interference, etc., it cannot effectively solve the defects caused by the process. When there is obliquely incident infrared radiation, the noise on the side is obviously high. Noise generated by surface photosensitive elements
In addition, during the chip preparation process, undercutting will inevitably occur at the interface between the photosensitive element and the electrode area; during the plasma etching process, defects will inevitably occur at the edge of the photosensitive element, which will affect the detection of the device. performance

Method used

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  • Tellurium-cadmium-mercury infrared detector chip for preventing non-infrared radiation incidence plane response
  • Tellurium-cadmium-mercury infrared detector chip for preventing non-infrared radiation incidence plane response
  • Tellurium-cadmium-mercury infrared detector chip for preventing non-infrared radiation incidence plane response

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Embodiment Construction

[0011] Taking the unit device as an example, the specific implementation of the present invention will be described in detail in conjunction with the accompanying drawings:

[0012] Utilize the conventional device preparation process: firstly, a surface of the mercury cadmium telluride sheet 3 is de-damaged, and a first anodic oxide layer 2 with a thickness of 80 nanometers is grown on the surface.

[0013] The side of the mercury cadmium telluride sheet on which the anodized layer grows is pasted together with the sapphire substrate 1 with low-temperature epoxy glue, and fully cured to ensure the bonding strength.

[0014] The upper surface of the pasted HgCdTe sheet is thinned and damaged, and the thickness of the HgCdTe sheet should be controlled at about 10 microns.

[0015] A shallow oxide layer is grown on the upper surface by anodic oxidation; patterns are etched by photolithography and plasma etching; bromine corrosion treatment is performed to remove part of the damag...

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Abstract

A Te-Cd-Hg infrared detector chip enabling to prevent influence from non-infrared radiation incoming surface is prepared for opening an infrared radiation incoming window at photo-sensor region, arranging Ti / Au infrared radiation resisting layer at periphery of said window and setting layer of Ti / Au infrared radiation resisting layer at side surface of Te-Cd-Hg thin plate in addition to double-layer of passivation layer formed by anode oxide layer and ZnS layer.

Description

Technical field: [0001] The invention relates to a photoconductive mercury cadmium telluride infrared detector, in particular to a photoconductive mercury cadmium telluride infrared detector which does not respond to infrared radiation except for the side of the photosensitive element and the incident window of the photosensitive element. Background technique: [0002] The surface passivation film of mercury cadmium telluride infrared photodetector not only protects the detector from various external environments and chemical substances during storage and use, but also improves the responsivity, stability and reliability of the detector. Sex makes an important contribution. However, with the reduction of the area of ​​the photosensitive element, when the external environment changes, the impact on the performance of the device will gradually increase. Through analysis, it is found that the main reason is that the side of the chip is exposed. Since the HgCdTe material is usu...

Claims

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Application Information

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IPC IPC(8): G01J1/02H01L31/00
Inventor 徐勤飞朱龙源刘洪洋唐恒敬龚海梅
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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