SOI compound covariant layer underlay with the Ni Hafnium middle layer

Abstract

The SOI composite covariant substrate with hafnium-nitride thin intermediate layer comprises: from bottom to top, a common SOI variant substrate, including a supporting bottom Si (100) substrate, a decoupling SiO2 insulation layer on middle, and a top ultrathin Si monocrystal covariant layer for mismatch strain coordination; a cubic hafnium-nitride thin intermediate layer together with the Si monocrystal covariant layer forming a composite covariant layer; and a large-mismatch extension layer forming large lattice mismatch with the Si substrate 1 to form together with former two parts a large-mismatch heterostructure.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an SOI compound variable layer substrate with a thin cubic hafnium nitride intermediate layer. Background technique [0002] In addition to the advantages of good quality, large size, easy processing, low price, mature technology and integration, silicon (Si) substrates also have good electrical and thermal conductivity. The application prospects of mismatched heterostructure materials are more optimistic. Especially for those important wide-bandgap compound semiconductor materials such as zinc oxide (ZnO), gallium nitride (GaN) and aluminum nitride (AlN) that are difficult to obtain with large size, high quality, and low-cost bulk single crystals, it is especially important for Si substrates. High hopes were placed at the end. However, due to the large lattice mismatch and thermal expansion coefficient difference between Si and these materials, and the directly exposed ...

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Problems solved by technology

The reasons may be as follows: (1) There are many ion damage defects and corrosion pits in the top thin single crystal silicon layer of the SOI covariable substrate prepared by high-energy oxygen ion implantation and chemical thinning technology, and the surface undulation is relatively large. large; (2) There is a large mismatch between the top thin single crystal silicon layer of the SOI covariable substrate and the hexagonal heterogeneous material, which cannot provide a more lattice-matched growth template; (3) directly on the SOI Large-mismatch hexagonal heterogeneous materials are grown on covariant substrates, and the exposed top thin monocrystalline silicon layer surface is prone to pre-reaction with reactive oxygen or nitrogen sources to form an amorphous SiOx or SiNx layer that is not conducive to film growth, In addition, it cannot overcome the interface chemical reaction or interdiffusion of interfacial components between the top thin single crystal silicon layer and the epitaxial layer, thus weakening the mismatch strain coordination effect of the thin single crystal silicon layer; (4) Although the cubic SiC formed by surface carbonization The layer has relatively good thermochemical stability, but it has a large mismatch with the Si substrate and the hexagonal epitaxial layer, and its own poor growth quality cannot serve as a good growth template and prevent interfacial chemical reactions or interface Barrier role for component interdiffusion

A thin middle layer with good thermal and chemical stability and a good matching relationship with the Si substrate and the large mismatched epitaxial layer is prepared and grown on the SOI covariable substrate, and the top thin single crystal silicon layer It is an effective method to solve the problem of poor surface morphology of SOI substrate, which cannot provide a good growth template and prevent interfacial chemical reaction or interdiffusion of interfacial components. , but there is very little research work in this area at home and abroad, and for materials such as hexagonal epitaxial layers ZnO, GaN, and AlN with large mismatch growth on cubic Si substrates, which structure is suitable for cubic or hexagonal thin interlayers? don't know

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