Method for preparing FED thin film type metal electrode

A metal electrode and thin-film technology, which is applied in the field of preparation of thin-film metal electrodes for field emission displays, can solve the problems affecting the ability of metal electrodes to emit electrons, reduce the image quality of flat-panel displays, and the etching process is difficult to control, etc., to improve The ability to emit electrons, solve the effect of etching resistance, and small undercutting

Inactive Publication Date: 2007-07-25
厦门火炬福大显示技术有限公司 +1
View PDF0 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Because the photoresist used for the metal film mask is not resistant to alkaline solutions, acidic solutions are usually used to etch the metal film chromium Cr, but the etching process is not easy to control, and the reaction is relatively calm at the beginning. The chemical reaction is relatively rapid in an instant, so that the metal electrode is easy to corrode after etching, and it may also affect other metal thin film layers on the substrate. The ability to emit electrons, greatly reducing the image quality of flat panel displays

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] The present invention will be further described in detail through specific examples below.

[0019] The present invention is realized through the following steps.

[0020] 1. On the cleaned flat glass substrate, the metal Cr / Cu / Cr composite film is sequentially plated by DC sputtering. The thin film Cu emits electrons, and its thickness is about 240nm. The underlying Cr is to improve the relationship between Cu and the glass substrate. Adhesion, the upper layer Cr is in order to protect Cu from being oxidized, the film thickness is about 30nm;

[0021] 2. The model is LPR-800 negative photoresist. The photoresist has good adhesion to metal, but it is not resistant to alkaline solution. It includes raw material resin, photosensitizer and solvent, and dilutes with cyclohexanone ;

[0022] 3. The above photolithography is transferred to the glass substrate with metal film Cr / Cu / Cr by screen (250 mesh) printing;

[0023] 4. Bake the above substrate in an oven, keep warm ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

Changing temperature and time for firming film of photoresist obtains better adhesive force between photoresist and base plate of glass. Thus, etching procedure can be carried out in alkali solution, and etching procedure is easy to be controlled, as well as undercutting phenomenon is overcome effectively so as to raise display quality of flat panel display device. The invention is simple, and can prepare metal electrodes in flat panel display without need of dedicated photoresist.

Description

technical field [0001] The invention relates to a preparation method of a field emission display (FED) film type metal electrode. technical background [0002] The existing FED metal electrode preparation technology is to use photolithography technology to obtain thin-film metal electrodes through dry or wet etching. Dry etching is suitable for small-sized field emission displays. When it comes to large-sized substrates, the cost of dry etching is very high. At this time, wet etching can be used to prepare metal electrodes. Since the photoresist used for the metal film mask is not resistant to alkaline solutions, acidic solutions are usually used to etch the metal film chromium Cr, but the etching process is not easy to control, and the reaction is relatively calm at the beginning. The chemical reaction is relatively rapid in an instant, so that the metal electrode is easy to corrode after etching, and it may also affect other metal thin film layers on the substrate. The a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01J9/02
CPCC03C15/00
Inventor 郭太良张永爱雷晓阳
Owner 厦门火炬福大显示技术有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap