Preparation method of tunnelling diode of quantum logical device

Abstract

A method for preparing a tunneling diode of quantum logic component includes applying gas phase epitaxial process to grow single crystal silicon (SCS) film and gas phase deposition process to grow silicon quantum dot film, using semiconductor quantum conveying means to simulate tunneling current character of tunneling diode component for making further regulation on folding character of tunneling current, growing p type of SCS film on heavy doped p type of single crystal silicon substrate first then growing n type of silicon quantum dot film on formed p type of film by gas phase epitaxial unit.

Description

technical field [0001] The invention relates to a method in the technical field of semiconductor materials, in particular to a method for preparing a tunneling diode of a quantum logic device. Background technique [0002] Resonant tunneling diode devices can be used to prepare various multifunctional analog / digital integrated circuits, such as signal processors, analog-to-digital converters, communication equipment and memory devices, and are one of the most promising devices in the field of solid-state electronics. Silicon materials are the backbone of the current semiconductor electronics industry. Silicon-based devices are easy to integrate with mainstream silicon-based circuits. Therefore, the research on silicon-based resonant tunneling diodes has very important practical significance for the preparation and performance improvement of logic devices. Logic devices with unique performance can be obtained by utilizing the characteristics of silicon quantum dot heterojunct...

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Problems solved by technology

However, the fabrication of silicon quantum dot resonant tunneling diodes that can be used in high noise-tolerant quantum logic devices has not been reported so far.