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Preparation method of Zno back gate nano wire field effect tube

A technology of field effect tubes and nanowires, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as inability to optimize device structure, inability to guide device process, etc., achieve low cost, save cost, and simple process easy effect

Inactive Publication Date: 2009-12-02
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Abstract
  • Description
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Problems solved by technology

Moreover, the transport mechanism of nanowires has not been well simulated, and the device structure cannot be optimized, so that it cannot effectively guide the device process

Method used

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  • Preparation method of Zno back gate nano wire field effect tube
  • Preparation method of Zno back gate nano wire field effect tube
  • Preparation method of Zno back gate nano wire field effect tube

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Embodiment Construction

[0026] The present invention will be further described in detail below in conjunction with specific embodiments and with reference to the drawings.

[0027] The present invention provides a method for preparing a ZnO back-gate nanowire field effect tube. The steps of the preparation method are as follows:

[0028] (1) In P ++ SiO growth on type Si substrate 101 2 Dielectric layer 105, glue coating, pre-baking, RIE primer, using cross or groove plate to lithography the substrate;

[0029] The SiO 2 The thickness of the dielectric layer 105 is 2000~ The glue is coated with positive glue 5214, the rotating speed is 3500 rpm when the glue is uniformed, and the glue thickness is 1.6 μm; the pre-baking is baking at 100°C for 60 seconds;

[0030] (2) Put the original grown ZnO nanowire 102 and the original glass substrate in ethanol and undergo ultrasonic degradation. After degradation, most of the ZnO nanowire 102 is separated from the original glass substrate and dispersed in the etha...

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Abstract

The invention relates to the technical field of compound semiconductor devices, in particular to a method for preparing a back gate ZnO nanowire field effect transistor. The present invention uses ZnO nanowires as field effect transistor channels, adopts two methods of grooves and crosses to realize the deposition and positioning of nanowires to the device substrate, and uses Ti / Au to form ohmic contacts with ZnO channels, conventional Liff-off Methods The Al2O3 gate oxide was formed by sputtering, and the P++Si substrate was used as the back gate of the field effect transistor. The invention has the advantages of obvious effect, simple and easy process, economical applicability and strong reliability, and is easy to adopt and popularize in the manufacture of microwave and millimeter wave compound semiconductor devices and sensors.

Description

Technical field [0001] The invention relates to the technical field of compound semiconductor devices, in particular to a method for preparing a ZnO back gate nanowire field effect tube. Background technique [0002] Among various one-dimensional nanowire devices composed of ZnO nanowires, ZnO nanowire field effect transistors have received extensive international attention in recent years due to their unique properties. ZnO nanowire field effect transistor (ZnO NW FET) is a kind of field effect tube realized by using ZnO nanowire as the channel. It is characterized by the new MOSFET structure. ZnO nanowire and gate oxide and metal form a metal-oxide- Semiconductor structure. Field-effect transistors with this structure are potentially widely used in piezoelectric effect, optical effect, electromagnetic, chemical sensing, etc. Among them, due to the high surface area / volume ratio of ZnO nanowires, successfully fabricated ZnO nanowire field effect transistors can also be widely us...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336
Inventor 付晓君张海英徐静波黎明
Owner SEMICON MFG INT (SHANGHAI) CORP
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