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Low temperature preparation method for alcohol heat assistant ferro-electricity film

A ferroelectric thin film and thin film technology, which is applied in the field of low-temperature preparation of ferroelectric thin films assisted by alcohol heat, can solve problems affecting material reliability and stability, film cracking, and deterioration of film dielectric properties, so as to improve material properties, Mild reaction conditions and wide applicability

Inactive Publication Date: 2009-11-11
TONGJI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Prolonged high-temperature treatment will lead to the appearance of a diffusion layer between the film and the electrode and between the electrode and the substrate
Such diffusion layers tend to deteriorate the dielectric properties of the film
In addition, changes in thermal stress can easily cause cracks in the film, which will inevitably affect the reliability and stability of the material.
At present, there is no method using the combination of sol-gel and alcohol heat in Pt / Ti / SiO 2 Report on non-lead ferroelectric thin film grown on / Si

Method used

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  • Low temperature preparation method for alcohol heat assistant ferro-electricity film
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  • Low temperature preparation method for alcohol heat assistant ferro-electricity film

Examples

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example 1

[0023] Preparation of Ba(Ti 1-x Zr x )O 3 , (x=0-0.9) ferroelectric thin film:

[0024] The chemical raw material used is barium acetate [Ba(CH 3 COO) 2 ], zirconium isopropoxide [Zr(OC 3 h 7 ) 4 ] and titanium isopropoxide [Ti(OC 3 h 7 ) 4 ], the solvent is glacial acetic acid and ethylene glycol ether. First heat barium acetate (according to a certain stoichiometric ratio) in glacial acetic acid solution to boiling, stop heating after 5 minutes, and cool to room temperature, the molar ratio of Ba to glacial acetic acid is 1:10. Then the mixed solution of zirconium isopropoxide and titanium isopropoxide, ethylene glycol ethyl ether and acetylacetone (AcAc) is added to barium-containing glacial acetic acid solution, wherein: the molar ratio of Ti to AcAc is 1:2, (iso Titanium propoxide + zirconium isopropoxide): the molar ratio of ethylene glycol ether is 1:10. Finally, ethylene glycol ether was added to adjust the concentration of the final solution to 0.3M. Afte...

example 2

[0028] Preparation of BaTiO 3 Ferroelectric thin film:

[0029] The chemical raw material used is barium acetate [Ba(CH 3 COO) 2] and titanium isopropoxide [Ti(OC 3 h 7 ) 4 ], the solvent is glacial acetic acid and ethylene glycol ether. First heat barium acetate (according to a certain stoichiometric ratio) in glacial acetic acid solution to boiling, stop heating after 5 minutes, and cool to room temperature, the molar ratio of Ba to glacial acetic acid is 1:10. Then add the mixed solution of titanium isopropoxide, ethylene glycol ethyl ether and acetylacetone (AcAc) into the barium-containing glacial acetic acid solution, wherein: the molar ratio of Ti to AcAc is 1:2, titanium isopropoxide: ethylene diacetone The molar ratio of alcohol to ether is 1:10. Finally, ethylene glycol ether was added to adjust the concentration of the final solution to 0.3M. After standing for 24 hours, it was used to prepare the film.

[0030] The substrate used is Pt / Ti / SiO 2 / Si(100), ...

example 3

[0033] Preparation of BaTiO 3 Ferroelectric thin film:

[0034] The chemical raw material used is barium acetate [Ba(CH 3 COO) 2 ] and titanium isopropoxide [Ti(OC 3 h 7 ) 4 ], the solvent is glacial acetic acid and ethylene glycol ether. First heat barium acetate (according to a certain stoichiometric ratio) in glacial acetic acid solution to boiling, stop heating after 5 minutes, and cool to room temperature, the molar ratio of Ba to glacial acetic acid is 1:10. Then add the mixed solution of titanium isopropoxide, ethylene glycol ethyl ether and acetylacetone (AcAc) into the barium-containing glacial acetic acid solution, wherein: the molar ratio of Ti to AcAc is 1:2, titanium isopropoxide: ethylene diacetone The molar ratio of alcohol to ether is 1:10. Finally, ethylene glycol ether was added to adjust the concentration of the final solution to 0.3M. After standing for 24 hours, it was used to prepare the film.

[0035] The substrate used is Pt / Ti / SiO 2 / Si(100),...

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Abstract

The invention belongs to the technical field of preparing non-lead ferroelectric thin films by sol-gel method. The low-temperature preparation method of the alcohol-heat assisted ferroelectric thin film of the present invention is as follows: immerse the coated thin film in an alcohol solution at 120-300 DEG C for 10-30 hours at a pressure of 2-5 MPa, and then sputter the upper electrode. The alcohol thermal reaction condition of the present invention is relatively mild, the range of temperature adjustment is relatively wide, and the energy consumption is low. The reaction and crystal growth process can be effectively controlled by adjusting the reaction temperature, time and pressure, the composition of the solution and the pH value of the solution, so as to obtain the ideal material. At the same time, it effectively avoids the phenomenon of composition gradient and composition unevenness caused by the traditional direct use of hydrothermal method to prepare ferroelectric thin film on titanium substrate at low temperature, so as to effectively improve the material performance.

Description

technical field [0001] The invention belongs to the technical field of preparing non-lead ferroelectric thin films by a sol-gel method. Background technique [0002] In the past few decades, a variety of thin film preparation methods have been adopted to prepare ferroelectric thin films, including: different physical vapor deposition techniques plasma sputtering deposition (PSD) and ion beam sputtering deposition (IBSD ), pulsed laser flash deposition (PLAD), molecular beam evaporation epitaxy (MBE) in electron beam or electric furnace, metal organic vapor deposition (MOCVD), chemical dissolution (MOD such as: sol-gel process and metal organic deposition method ) [1-10] . It is well known that high temperature treatment (>500° C.) is required for the film during the preparation of the film by the above methods. Prolonged high-temperature treatment will lead to the appearance of a diffusion layer between the film and the electrode and between the electrode and the subst...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C28/00C23C18/00C23C14/14C23C14/34C04B35/624
Inventor 翟继卫徐金宝
Owner TONGJI UNIV
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