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Atmospheric synthesizing method for silicon carbide titanium ceramic powder

A ceramic powder and normal pressure synthesis technology, which is applied in the normal pressure synthesis of low-cost and high-purity silicon carbide titanium Ti3SiC2 ceramic powder, and in the field of normal pressure synthesis of silicon carbide titanium ceramic powder, achieving high purity and saving metal Ti resources , the effect of wide synthetic temperature range

Inactive Publication Date: 2009-10-28
BEIJING JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, a certain amount of Ti powder is still used in the ingredients reported by the two patents

Method used

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  • Atmospheric synthesizing method for silicon carbide titanium ceramic powder
  • Atmospheric synthesizing method for silicon carbide titanium ceramic powder

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Embodiment 1: A normal pressure synthesis method of silicon carbide titanium ceramic powder: contains the following steps;

[0022] 1) Press TiH 2 :Si:TiC:Al=1:1:1.8:0.2 molar ratio ingredients, weigh TiH 2 26.10 grams of Si powder, 14.69 grams of Si powder, 56.38 grams of TiC powder, and 2.82 grams of Al powder;

[0023] 2) Put the above-mentioned ingredients into the ball mill tank and place on the ball mill for mixing for 10 hours;

[0024] 3) Place the uniformly mixed ingredients in a briquetting mold and press them into a block under a pressure of 30MPa;

[0025] 4) Put the above-mentioned briquettes into a high-temperature furnace, and raise the temperature of the furnace to 1300° C. at a heating rate of 15° C. / min under a vacuum atmosphere, and the holding time is 10 minutes. Ti 3 SiC 2 powder, powder X-ray diffraction (XRD) patterns such as figure 2 shown. Depend on figure 2 It can be seen that the purity of the product is high, only Ti 3 SiC 2 Phase...

Embodiment 2

[0026] Embodiment 2: A normal-pressure synthesis method of silicon carbide titanium ceramic powder: contains the following steps;

[0027] 1) Press TiH 2 :Si:TiC:Al=1:1:1.9:0.2 molar ratio ingredients, weigh TiH 2 25.29 grams of Si powder, 14.25 grams of Si powder, 57.72 grams of TiC powder, and 2.74 grams of Al powder;

[0028] 2) Put the above-mentioned ingredients into the ball mill tank and place on the ball mill for mixing for 10 hours;

[0029] 3) Place the uniformly mixed ingredients in a briquetting mold and press into a block under a pressure of 40MPa;

[0030] 4) Put the above-mentioned briquettes into a high-temperature furnace, and raise the temperature of the furnace to 1450° C. at a heating rate of 30° C. / min under a vacuum atmosphere, and the holding time is 15 minutes. Ti 3 SiC 2 Powder, its XRD result is identical with embodiment 1.

Embodiment 3

[0031] Embodiment 3: A normal-pressure synthesis method of silicon carbide titanium ceramic powder: contains the following steps;

[0032] 1) Press TiH 2 :Si:TiC:Al=1:1:2:0.2 molar ratio ingredients, weigh TiH 224.54 grams of Si powder, 13.83 grams of Si powder, 58.96 grams of TiC powder, and 2.66 grams of Al powder;

[0033] 2) Put the above-mentioned ingredients into the ball mill tank and place on the ball mill for mixing for 10 hours;

[0034] 3) Place the uniformly mixed ingredients in a briquetting mold and press them into a block under a pressure of 50MPa;

[0035] 4) Put the above-mentioned briquettes into a high-temperature furnace, and raise the temperature of the furnace to 1550° C. at a heating rate of 40° C. / min under a vacuum atmosphere, and the holding time is 5 minutes. Ti 3 SiC 2 Powder, its XRD result is identical with embodiment 1.

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Abstract

The invention relates to a synthesis method of sic ceramic powder at ordinary pressure. The invention is made from the following materials that are TiH2 powder, Si powder, and TiC powder, and the using of Al which is used as reaction promoter. The materials, according to a certain mole ratios of Ti: Si: TiC: Al of 1:1: (1.8-2): (0.15-0.25), are mixed dryly together for 10 hours, and then are compacted into briquetting under the pressure of 30-50 MPa. Then the briquetting is put into high temperature furnace at vacuum condition. Next in a heating increasing rate of 15-50 DEG C / min, the temperature in furnace is increased to 1300-1550 DEG C and is kept for 5-15min, then the Ti3SiC2 powder of high purity and low cost is obtained. The invention is characterized by short synthesis time of Ti3SiC2 powder, high purity, low cost, simple equipment, and stable technical parameter, and being suitable for large scale production.

Description

technical field [0001] The invention relates to a normal-pressure synthesis method of silicon carbide titanium ceramic powder, especially low-cost and high-purity silicon carbide titanium Ti 3 SiC 2 The invention discloses a method for synthesizing ceramic powder under normal pressure, which belongs to the technical field of ceramic material preparation. Background technique [0002] Silicon carbide titanium Ti 3 SiC 2 With high electrical conductivity, high thermal conductivity, anti-oxidation, thermal shock resistance, corrosion resistance, self-lubricating, easy processing and other excellent properties, it is a key component of bearings, contacts, corrosion-resistant parts, high-temperature heating parts and structural parts, and high-speed live friction preferred material. To prepare the above components, not only a large amount of low-cost Ti 3 SiC 2 Powder, to ensure the preparation cost of various components; and requires high-purity Ti 3 SiC 2 Powder, to ens...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/56C04B35/64
Inventor 李世波向卫华陈新华翟洪祥周洋
Owner BEIJING JIAOTONG UNIV
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