Etching liquid composition

Abstract

The object of the present invention is to provide an etching liquid composition for metallic thin film and metallic oxide thin film for producing an electronic device such as semiconductor device and flat panel display device, which does not contain acetic acid, does not have irritating odor, and changes little in performance. The solution is the etching liquid composition comprising phosphoric acid, nitric acid, methoxy acetic acid, and water.

Description

technical field [0001] The present invention relates to an etchant composition used for etching metal thin films and metal oxide thin films in the manufacturing process of various electronic devices such as semiconductor devices and flat panel display devices. Background technique [0002] In the manufacture of electronic devices, various metal thin films and metal oxide thin films are used. At present, aluminum and aluminum alloys are used as wiring materials for semiconductor devices, and as reflective plates or reflective electrode materials for liquid crystal display devices. [0003] In recent years, silver or alloys mainly composed of silver have been used as reflectors or reflective electrode materials of liquid crystal display devices, and indium tin oxide (ITO) and indium zinc oxide (IZO) have been used as transparent electrode materials. As an etchant composition for metal thin films and metal oxide thin films used when forming these wirings, reflective plates, ref...

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Problems solved by technology

[0007] However, due to the high volatility of acetic acid in the mixed acid, the composition of the liquid changes during the etching process, which is also a major cause of the problem that stable etching performance cannot be ensured. worsening problem

As an etchant composition similar to mixed acid, a composition composed of hydrofluoric acid, nitric acid, acetic acid and water has been reported (Patent Document 4), but due to the problem of odor as well as acetic acid, in addition, in order to control the etching rate, it is necessary to add over Hydrogen oxide aqueous solution, therefore has the problem of cumbersome handling

[0008] In order to solve the problem of the smell of acetic acid, it has also been reported to remove acetic acid, i.e., an etching solution composition composed of phosphoric acid and nitric acid from the composition of the mixed acid, but in order to maintain the etching rate, etc., it is necessary to properly supply nitric acid in the etching solution composition ( Patent Document 5), processes such as appropriately supplying hydrogen peroxide or nitric acid (Patent Document 6) to the etchant composition, any operation is very cumbersome, so it is not practical

In addition, the etchant composition consisting only of phosphoric acid and nitric acid has problems such as low wettability, generation of etching residues, and side etching, so it is not suitable for fine pattern processing

[0009] In addition, an etching solution composition (Patent Document 7) is disclosed in which citric acid is used instead of acetic acid in the composition of the mixed acid, but since citric acid does not have the effect of improving wettability, a fine pattern edge shape cannot be obtained, thus There are problems such as generation of etching residue

In addition, Patent Document 7 also discloses that in order to suppress NO X Produce and add the etchant composition of urea, but the solubility of urea in etchant composition is low, also there is the problem that etch rate is suppressed significantly due to addition

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