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Production of gallium nitride light emitting diode chip with small volume and hight brightness

A technology of light-emitting diodes and manufacturing methods, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve problems that do not involve small-volume high-brightness chip manufacturing technology, cannot realize small-volume chips, and limit chip application fields, and achieve extended current The effects of uniform distribution, increased luminous efficiency, and increased quantity

Inactive Publication Date: 2009-09-02
DAUAN LUMEI OPTOELECTRONICS
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  • Abstract
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Problems solved by technology

[0003] At present, there are relevant reports on this technology in various journals and patent documents, such as: "A Method for Making the N Electrode of Gallium Nitride Light-Emitting Diode Chips" with the publication number CN1466227A of the Chinese invention patent; "" with the publication number CN1351383A "Manufacturing method of gallium nitride-based blue light-emitting diode chip"; publication number is CN1379489A "substrate processing method of high-brightness gallium nitride-based light-emitting diode epitaxial wafer"; all disclose the corresponding gallium nitride-based light-emitting diode chip Preparation of related technologies, but the technologies disclosed in the above-mentioned documents do not involve the manufacturing technology of small-volume high-brightness chips, that is, small chips. The small size of the chip makes the application field of the chip more limited

Method used

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  • Production of gallium nitride light emitting diode chip with small volume and hight brightness

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Embodiment Construction

[0024] The following is an example to illustrate the manufacturing process of the small chip:

[0025] To make a chip with an area of ​​0.275×0.275mm2, the P electrode is circular, φ=0.09mm; the N electrode is a special drop-shaped geometric figure (see the figure in the manual) φ=0.09mm, take the following steps to achieve:

[0026] (1) Extended growth

[0027] Use sapphire as the substrate, grow N-type AlGaN buffer layer, N-type GaN layer, P-type GaN epitaxial layer by MOCVD method, and grow P+ layer doped with manganese (Mg) on ​​the P-type epitaxial layer;

[0028] (2) Evaporating transparent electrode

[0029] Then use the electron beam evaporation table, under high vacuum for 10 -5 ~10 -8 , Evaporation rate Under the condition of / sec; a thin Ni\Au layer is formed, which ensures uniform current expansion and provides high-quality ohmic contacts;

[0030] (3) Etching steps

[0031] Reactive ion etching is used, with chlorine and boron trichloride as the main component, and a...

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Abstract

A process for preparing the small-size high-brightness GaN LED chip includes such steps as epitaxial growth, evaporating transparent electrode, etching to form step, passivating, preparing P and N electrodes, annealing, testing its parameters, grinding, cutting and classifying.

Description

Technical field [0001] The invention relates to a method for manufacturing a light-emitting diode chip, in particular to a method for manufacturing a small-volume high-brightness gallium nitride light-emitting diode chip. Background technique [0002] Light-emitting diode (LED) is a light-emitting device that converts electrical energy into light energy. At present, the manufacturing technology of red, orange, yellow, and green light-emitting diodes has matured. The third-generation semiconductor materials represented by gallium nitride, With high luminous efficiency, high thermal conductivity, high temperature resistance, radiation resistance, acid and alkali resistance, high strength and high hardness, it is currently the most advanced semiconductor material. [0003] At present, there are related reports on this technology in various journals and patent documents, such as: "A Method for Making N Electrodes of Gallium Nitride LED Chips" with Chinese Invention Patent Publication...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00
Inventor 肖志国王省莲马欣荣陈向东
Owner DAUAN LUMEI OPTOELECTRONICS
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