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Preparation process of metal oxide film

An oxide film and metal technology, applied in the field of materials, can solve the problems of poor mechanical properties of basebands, inability to directly prepare YBCO films, and reduced use value of strips.

Inactive Publication Date: 2009-03-18
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the YBCO film is directly deposited on the Ni base band, the mechanical properties of the base band will be deteriorated due to the oxygen diffusion between Ni and YBCO, which will reduce the use value of the band.
Moreover, the compatibility between Ni and YBCO is poor, and a YBCO film with good performance cannot be directly prepared on the Ni substrate.

Method used

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  • Preparation process of metal oxide film
  • Preparation process of metal oxide film
  • Preparation process of metal oxide film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] see figure 1 , the CeO was prepared using the following steps 2 film:

[0035] a. Place the metal cerium target on the target stage 1, place the NiW3% biaxial textured substrate on the substrate stage 2, place the heating resistance wire 3 around and below the substrate stage, and place the thermocouple 5 on the substrate Next to stage 1 , target stage 1 , substrate stage 2 , heating resistance wire 3 and thermocouple 4 are all placed in growth chamber 9 . On the right side of the growth chamber 9, close to the substrate stage, there is an inlet pipe 6 for passing water vapor or oxygen, and on the right side of the growth chamber 9, near the position of the target stage, there is an inlet pipe 7 for passing argon and hydrogen gas, with a lower opening The vacuum pump 4 (mechanical pump and molecular pump) is connected, and the positive and negative electrodes of the sputtering power supply 8 are respectively connected to the outer cavity and the target stage.

[0036...

Embodiment 2

[0048] The difference between this embodiment and embodiment 1 is that

[0049] In step b, maintain a 0.7Pa argon-hydrogen mixed gas in the growth chamber 9;

[0050] In step d, the water vapor pressure is 2.4×10 -3 Pa; keep the total pressure at 0.8Pa, and the substrate temperature at 800°C;

[0051] In step e, the heating time is 30 minutes.

[0052] This specific embodiment is described in detail by taking Ce as an example, and the present invention is also applicable to other rare earth metal thin films.

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Abstract

The present invention relates to material technology, and is especially The preparation process of transition layer oxide film for superconductive belt. The process of the present invention can grow oxide film with excellent texture and high surface flatness fast. The process includes the following steps: 1. depositing metal film on metal substrate with texture characteristic via evaporation, sputtering or pulse laser deposition; 2. oxidizing the film while controlling the oxygen pressure component, annealing temperature and annealing time to control the orientation and surface flatness of the oxide film and form oxide film with biaxial texture characteristic; and 3. lowering the temperature. The transition layer oxide film has excellent texture and high surface flatness and the deposition rate may reach 0.3 nm / s, so that the present invention provides way for fast industrial growth of the second generation of transition layer oxide film for high temperature superconductive belt.

Description

technical field [0001] The invention relates to material technology, in particular to the preparation technology of superconducting tape oxide transition layer thin film. Background technique [0002] The discovery of high-temperature superconductors in 1986 aroused great interest and concern from the scientific community all over the world. Various countries in the world have conducted extensive and in-depth research on its material composition, structural characteristics, performance, and applications. Superconductors have many unique properties, such as no resistance, complete diamagnetism (Meissner effect) and superconducting tunneling effect (Josephson effect), etc. These properties can be used to develop many valuable applications in science and production. Such as strong magnets and superconducting quantum interference devices (SQUID), high-efficiency motors and lossless power transmission systems, etc. The discovery of high-temperature superconductors has increased...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/08C23C14/16C23C14/34C23C14/28C23C14/58H01L39/24
Inventor 李言荣陶伯万陈寅刘兴钊朱俊吴传贵吴健
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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