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A preparation method and structure of an all-intermetallic compound interconnection solder joint

An intermetallic compound and compound technology, which is used in metal processing equipment, metal processing, welding equipment, etc., can solve the problems of different orientations of intermetallic compounds, influence on the reliability of micro-solder joints, and easy generation of micro-voids, etc. Efficiency, suitable for large-scale production, the effect of avoiding high temperature damage

Active Publication Date: 2016-08-24
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For the high-temperature aging method, the reaction time required is at least several hours, and the production efficiency is too low; for the ultrasonic bonding method, due to the addition of ultrasound, it may cause damage to the brittle chip; for the nano-intermetallic compound particle method, the process is complicated ,higher cost
At the same time, the intermetallic compounds generated by the above three methods all have different orientations, and are prone to generate micro-voids during the growth process, which will have an adverse effect on the reliability of micro-soldering joints.

Method used

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  • A preparation method and structure of an all-intermetallic compound interconnection solder joint
  • A preparation method and structure of an all-intermetallic compound interconnection solder joint
  • A preparation method and structure of an all-intermetallic compound interconnection solder joint

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Embodiment 1

[0040] Such as figure 1 , figure 2 and Figure 5 As shown, the preparation method of the all-intermetallic compound interconnect solder joint of the present invention can be realized through the following specific process steps:

[0041] Step 1: Provide a first substrate 10, sputter an array of single crystal Cu first metal pads 20 with a thickness of 1 μm on the first substrate 10, and anneal the single crystal Cu first metal pads 20 on the first substrate 10. Sn is electroplated on the top, and Sn solder bumps 22 with a diameter of 1 μm are formed after reflow; a second substrate 30 is provided, and an array of polycrystalline Cu second metal pads 40 with a thickness of 2 μm is sputtered on the second substrate 30, Make the single crystal Cu first metal pad 20 and the polycrystalline Cu second metal pad 40 have the same array pattern, and electroplate a Ni / Au solderable layer 42 on the polycrystalline Cu second metal pad 40;

[0042] Step 2: aligning the Sn solder bump 2...

Embodiment 2

[0046] Such as image 3 , Figure 4 and Figure 5 As shown, the preparation method of the all-intermetallic compound interconnect solder joint of the present invention can be realized through the following specific process steps:

[0047] Step 1: Provide a first substrate 10, plate an array of Ni first metal pads 20 with a thickness of 5 μm and a good preferred orientation on the first substrate 10, and perform annealing treatment on the Ni first metal pads 20 with a preferred orientation. Sn is electroplated on it, and Sn solder bumps 22 with a diameter of 10 μm are formed after reflow; a second substrate 30 is provided, and an array of polycrystalline Ni second metal pads 40 with a thickness of 20 μm is electroplated on the second substrate 30, Make the array pattern of the preferred orientation Ni first metal pad 20 and the polycrystalline Ni second metal pad 40 the same, and electroplate the Au solderable layer 42 on the polycrystalline Ni second metal pad 40;

[0048] ...

Embodiment 3

[0051] Such as figure 1 , figure 2 and Figure 5 As shown, the preparation method of the all-intermetallic compound interconnect solder joint of the present invention can be realized through the following specific process steps:

[0052] Step 1: Provide a first substrate 10, plate an array of Cu first metal pads 20 with a thickness of 30 μm on the first substrate 10 and have a good preferred orientation, and anneal the Cu first metal pads 20 with a preferred orientation. Sn is electroplated on it, and Sn solder bumps 22 with a diameter of 100 μm are formed after reflow; a second substrate 30 is provided, and an array of polycrystalline Cu second metal pads 40 with a thickness of 100 μm is electroplated on the second substrate 30, Make the array patterns of the preferred orientation Cu first metal pad 20 and the polycrystalline Cu second metal pad 40 the same, and chemically deposit an OSP solderable layer 42 on the polycrystalline Cu second metal pad 40;

[0053] Step 2: a...

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Abstract

The invention discloses a preparation method and a structure of fully intermetallic compound interconnection solder joints. The preparation method comprises the following steps: preparing single crystal or preferentially orienting a first metal pad and solder bumps on a first substrate, preparing a second metal pad and a solderable layer on a second substrate, aligning and contacting the solder bumps and the second metal pad one by one to form a combined body, performing soldering reflux on the combined body at a desired temperature, applying direct current with a current density I / S, making the direct current direct from the first metal pad to the second metal pad until all the solder bumps are converted into an intermetallic compound through melting and soldering reaction, forming single-orientation intermetallic compound interconnection solder joints. According to the invention, the method accelerates the formation of the intermetallic compound, significantly improves the manufacturing efficiency, forms single-orientation intermetallic compound, improves the mechanical properties of solder joints and service reliability, is compatible with the semiconductor and packaging technology, and realizes low-temperature interconnection and high-temperature service.

Description

technical field [0001] The invention belongs to the field of electronic manufacturing, and relates to a preparation method and structure of all intermetallic compound interconnection solder joints. Background technique [0002] In the microelectronics industry, as the VLSI silicon chip technology is approaching the limit of Moore's Law, the packaging technology is gradually changing from two-dimensional packaging to three-dimensional packaging. Essentially, the purpose of 3D packaging is to bring chip technology and packaging technology together. At present, the diameter of flip-chip micro-bumps used in 2D packaging is about 100 μm, and in 3-D packaging technology, the diameter of micro-bumps may be reduced to 1 μm. The continuous reduction in the size of micro-bumps will mainly bring about two aspects of reliability problems for interconnection solder joints. [0003] First of all, micro-sized solder joints have been in service for a long time at relatively high temperatu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B23K1/00B23K3/00B23K3/08
CPCB23K1/0008B23K3/00B23K3/08
Inventor 黄明亮赵宁张志杰杨帆黄斐斐
Owner DALIAN UNIV OF TECH
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