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Method for preparing metal nanometer thin film dipped barium-tungsten cathode

A barium tungsten cathode, metal nanotechnology, applied in cold cathode manufacturing, electrode system manufacturing, discharge tube/lamp manufacturing, etc., can solve problems such as poor processing and brittle tungsten sponge, and achieve the effect of increasing the emission current density

Inactive Publication Date: 2009-02-11
INST OF ELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The traditional method of preparing a film-coated cathode is to press tungsten powder with a particle size of 2-8um and sinter it in hydrogen at high temperature (1800°C-2000°C) to form a porous rod-shaped tungsten sponge with a porosity of about 20%. Sponge is brittle and difficult to process

Method used

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  • Method for preparing metal nanometer thin film dipped barium-tungsten cathode
  • Method for preparing metal nanometer thin film dipped barium-tungsten cathode

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Embodiment Construction

[0015] like figure 2 Shown is a schematic diagram of a novel cathode in which nanoparticles are deposited onto the surface of an impregnated barium tungsten cathode according to the present invention. Put the tungsten sponge base 2 into the cathode support cylinder 3, and weld 2 and 3 firmly by means of electron beam or laser welding. Then the emission material is immersed in the tungsten sponge substrate 2 at high temperature (about 1600°C), and the surface of the cathode is turned into the required arc, and then put into the deposition system of osmium, iridium, rhenium, ruthenium or their alloy nanoparticles, Deposit metal nanoparticles with a particle diameter of 10 nm to 100 nm on the surface of the cathode to form a metal nano particle layer 1 with a thickness of about 0.1 micron to 0.6 micron.

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Abstract

The disclosed preparation method for metal nano film dipping Ba-W cathode in microwave device has large emission current density and low evaporation by depositing one layer of 10-100nm metal grain film of Os, Ir, Rh, Ru or other with thickness as 0.1-0.6um.

Description

technical field [0001] The invention discloses a method for preparing a barium-tungsten cathode impregnated with a metal nano-film, which relates to the technical field of microwave devices, and is a method for preparing a barium-tungsten cathode impregnated with a metal nano-particle film with high emission current density and low evaporation. Background technique [0002] At present, film-impregnated barium-tungsten cathode is the main electron source of microwave devices, especially traveling wave tubes and klystrons, but with the wide application of microwave devices in radar, satellite communication, and electronic warfare systems, the requirements for microwave devices are also increasing. Higher and higher, such as: microwave devices are developing towards high power, large duty ratio, high efficiency, long life, and high reliability. Therefore, the cathode, which is the heart of microwave devices, also has higher and higher requirements. [0003] The traditional meth...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J9/02
Inventor 刘燕文刘胜英
Owner INST OF ELECTRONICS CHINESE ACAD OF SCI
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