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Ferroelectric film capacity used for ferroelectric memorizer and its manufacturing method

A technology of ferroelectric memory and ferroelectric thin film, which is applied in the fields of electric solid device, semiconductor/solid state device manufacturing, circuit, etc. Large polarization, good fatigue characteristics, good compatibility

Inactive Publication Date: 2008-10-08
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

PZT ferroelectric capacitors with metal Pt / ferroelectric film / metal Pt (MFM) structure as the main storage medium of FeRAM have a large fatigue rate and poor leakage current characteristics, and ferroelectric films directly prepared on metal Pt The crystallization performance is poor, which affects the performance of the material
If the oxide electrode is directly used, it is not only difficult to prepare, but the ferroelectric thin film prepared on it generally has a large leakage current.

Method used

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  • Ferroelectric film capacity used for ferroelectric memorizer and its manufacturing method
  • Ferroelectric film capacity used for ferroelectric memorizer and its manufacturing method
  • Ferroelectric film capacity used for ferroelectric memorizer and its manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] Embodiment 1 A method for preparing a ferroelectric film capacitor for ferroelectric memory, including

[0032] ① Surface treatment and cleaning of silicon substrate 1 according to standard CMOS process;

[0033] ② Using the thermal oxidation method, a 150nm thick silicon dioxide barrier layer 2 is formed on the surface of the silicon substrate 1;

[0034] ③Use magnetron sputtering method to prepare 20nm thick titanium dioxide bonding layer 3 on the silicon dioxide barrier layer 2. The magnetron sputtering process conditions are: sputtering pressure 1.5Pa, sputtering substrate temperature 200℃, sputtering Shooting atmosphere is O 2 :Ar=1:9;

[0035] ④Prepare 150nm thick bottom electrode metal layer Pt4 on the titanium dioxide bonding layer 3 by magnetron sputtering. The process conditions of magnetron sputtering are: sputtering pressure 1Pa, sputtering substrate temperature 200℃, sputtering atmosphere Is Ar gas;

[0036] ⑤ LSMO target material is prepared by standard solid ...

Embodiment 2

[0047] Embodiment 2 A method for preparing a ferroelectric film capacitor for ferroelectric memory, including

[0048] ① Surface treatment and cleaning of silicon substrate 1 according to standard CMOS process;

[0049] ② Using thermal oxidation method, a 120nm thick silicon dioxide barrier layer 2 is formed on the surface of the silicon substrate 1;

[0050] ③ Use magnetron sputtering method to prepare 30nm thick titania bonding layer 3 on the silicon dioxide barrier layer 2. The magnetron sputtering process conditions are: sputtering pressure 0.5Pa, sputtering substrate temperature 300℃, sputtering Shooting atmosphere is O 2 :Ar=2:9;

[0051] ④A 150nm thick lower electrode metal layer Pt4 is prepared on the titanium dioxide bonding layer 3 by magnetron sputtering. The magnetron sputtering process conditions are: sputtering pressure 0.5Pa, sputtering substrate temperature 300℃, sputtering The atmosphere is Ar gas;

[0052] ⑤Prepare the LSMO target by standard solid-phase reaction...

Embodiment 3

[0059] Embodiment 3 A method for preparing a ferroelectric film capacitor for ferroelectric memory, including

[0060] ① Surface treatment and cleaning of silicon substrate 1 according to standard CMOS process;

[0061] ②Using thermal oxidation method to generate 200nm thick silicon dioxide barrier layer 2 on the surface of silicon substrate 1;

[0062] ③Use magnetron sputtering method to prepare 20nm thick titania bonding layer 3 on the silicon dioxide barrier layer 2. The magnetron sputtering process conditions are: sputtering pressure 1Pa, sputtering substrate temperature 200℃, sputtering The atmosphere is O 2 :Ar=1:9;

[0063] ④ Use magnetron sputtering method to prepare 100nm thick bottom electrode metal layer Pt4 on the titanium dioxide bonding layer 3. The process conditions of magnetron sputtering are: sputtering pressure 1Pa, sputtering substrate temperature 200℃, sputtering atmosphere Is Ar gas;

[0064] ⑤Prepare the LSMO target by standard solid-phase reaction method, a...

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Abstract

The invention relates to a ferro-electricity film capacitor of ferro-electricity and relative preparation, wherein said film capacitor is formed by silicon substrate, silica dioxide baffle layer, titania adhesive layer, low electrode metal layer, low buffer layer, ferro-electricity film layer, up buffer layer, and up electrode metal layer; the adhesive layer is 10-30nm thick; the low electrode metal layer is 100nm-300nm; the low buffer layer is 5-20nm thick; the ferro-electricity is 200-500nm thick; the up buffer layer is 100-200nm thick; the up electrode metal layer is 80-150nm thick. The inventive capacitor has low fatigue speed, low drain current. The invention uses magnetic control splash method to layer-to-layer splash production, while the product has better property, with single direction.

Description

Technical field [0001] The invention relates to a ferroelectric film capacitor and a preparation method thereof. Background technique [0002] Ferroelectric random access memory (FeRAM) has many outstanding advantages compared with traditional semiconductor memory, and has broad application prospects and huge economic benefits. PZT ferroelectric capacitor with metal Pt / ferroelectric film / metal Pt (MFM) structure as the main storage medium of FeRAM has a large fatigue rate and poor leakage current characteristics, and a ferroelectric film prepared directly on metal Pt The poor crystallization performance affects the performance of the material. If the oxide electrode is directly used, it is not only difficult to prepare, but the ferroelectric thin film prepared on it generally has a large leakage current. [[1]Eshita T., FRAM Reliability Issues and Improvement for Advanced FeRAM, ISIE2005 shanghai, 2005, 4, 23. [2] Wouters Dirk, High Density FeRAM Process Integration, ISIF2005, sha...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/115H01L27/04H01L21/8247H01L21/822H01L21/02H10B69/00
Inventor 于军王耘波彭刚周文利高俊雄
Owner HUAZHONG UNIV OF SCI & TECH
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