Hydride gas phase extent device for manufacturing thick film nitride material

Abstract

The invention relates to a hydride gas extending device for preparing thick nitride material, which comprises: an upright quartz extending growing room in cylinder shape; a growing room heater in annular shape for sheathing the growing room; an upper cover plate fixed above the growing room with a central round hole; a substrate rotating and lifting device whose front end has one rod whose end is the substrate base, while the rod is slide matched with the central round hole of upper cover plate; a metal react source arranger inside the growing room; a chassis fixed at the lower end of growing room with several gas inlets; and an ammonia gas sprayer with several ejector nozzles, while it is connected to the ammonia gas inlets of chassis with tube.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a hydride vapor phase epitaxy device designed and manufactured for growing high-quality, high-uniform thick-film nitride materials. Background technique [0002] The spectrum of nitride multi-system materials is from 1.9ev to 6.2ev, which can be used for interband emission, and the color covers from red to ultraviolet wavelengths, not only in optoelectronic applications, such as blue light, green light, ultraviolet light-emitting diodes (LEDs), short Wavelength laser diodes (LDs), ultraviolet detectors, Bragg reflection waveguides, etc. have obtained important applications and developments, and have also received extensive attention in microelectronic applications, which can produce high-temperature, high-frequency and high-power devices, such as high Electron mobility transistors (HEMTs), heterojunction bipolar transistors (HBTs), etc. Among them, gallium nitride (GaN) m...

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Problems solved by technology

[0003] The epitaxial device used for the preparation of thick-film nitrides in the present invention existed during growth: nitrides were deposited everywhere, the reaction of the growth surface was uneven, the side reactions were serious, and the by-product NH 4 Chlorine, etc. block the gas path, gas phase depletion and other problems, resulting in problems such as low growth uniformity, low quality, low reaction efficiency and slow growth rate of thick film nitride materials

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