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Heat sink of encapsulation through high frequency in use for semiconductor laser modulated by electrical absorption

An electro-absorption modulation and semiconductor technology, which is applied in the heat sink field of high-frequency packaging of electro-absorption modulation semiconductor lasers, can solve the problems affecting the high-frequency performance of the device packaging module and serious microwave loss, so as to improve the overall high-frequency dynamic performance, The effect of small reflection parameters and shortening the length of the connecting gold wire

Inactive Publication Date: 2008-05-28
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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AI Technical Summary

Problems solved by technology

The longer the gold wire, the more the number, the greater the parasitic parameters introduced, the more serious the microwave loss caused, which will affect the high-frequency performance of the entire device package module

Method used

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  • Heat sink of encapsulation through high frequency in use for semiconductor laser modulated by electrical absorption
  • Heat sink of encapsulation through high frequency in use for semiconductor laser modulated by electrical absorption

Examples

Experimental program
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Embodiment Construction

[0021] see figure 1 and figure 2 , which includes:

[0022] A dielectric heat sink substrate 1, what the dielectric heat sink substrate 1 adopts is aluminum nitride (AlN) or aluminum oxide (Al 2 o 3 ) or silicon carbide (SiC) or beryllium oxide (BeO) or beryllium nitride (BN) or diamond material, the substrate material requires good electrical properties (small dielectric constant, low dielectric loss, good thermal properties, High thermal conductivity) and a thermal expansion coefficient that matches the semiconductor material of the chip. At the same time, there are also requirements for the flatness and roughness of the substrate;

[0023] A microwave transmission line 2, the microwave transmission line 2 adopts a coplanar waveguide transmission line (the coplanar waveguide transmission line is also represented by a label 2), a coplanar waveguide (CPW) transmission line 2, the characteristic impedance of the coplanar waveguide (CPW) transmission line 2 is 50Ω , the met...

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Abstract

The heat sink includes following parts: a basal piece of dielectric heat sink; being prepared on one side of up surface on the basal piece of dielectric heat sink, a microwave transmission line forms three endpoints on the said up surface; being prepared up surface on the basal piece of dielectric heat sink, a film resistor is formed on tail end of endpoint in microwave transmission line; multiple pieces of metal electrodes are prepared on the other side of up surface on the basal piece of dielectric heat sink; being prepared on the low surface of basal piece of dielectric heat sink, an earthed electrode covers the low surface of basal piece of dielectric heat sink.

Description

Technical field: [0001] The invention belongs to the field of optoelectronic devices, and relates to a heat sink for optoelectronic device packaging, more specifically, a heat sink for high frequency packaging of electric absorption modulation semiconductor lasers. Background technique: [0002] The monolithic integration (EML) light source of an electroabsorption modulator (EAM) and a distributed feedback laser (DFB LD) has low chirp, small operating voltage, small size, compact structure, high reliability, and high optical coupling efficiency between devices , high output optical power, low cost and other advantages, it is an ideal light source for WDM optical communication systems, especially long-distance high-speed optical fiber networks. After the optoelectronic device chip is manufactured, the packaging is the key to whether the device performance can be fully realized and utilized, and whether the device can be practical. The introduction and distribution of electric...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/024H01L23/34H05K7/20
CPCH01L2924/0002H01L2924/00
Inventor 李宝霞张靖杨华王圩
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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