Thin planar semiconductor device having electrodes on both surfaces and method of fabricating same

Abstract

A thin, planar semiconductor device having electrodes on both surfaces is disclosed. This semiconductor device is provided with an IC chip and a wiring layer having one side that is electrically connected to surface electrodes of the IC chip. On this surface of the wiring layer, conductive posts are provided on wiring of the wiring layer, and an insulating resin covers all portions not occupied by the IC chip and conductive posts. The end surfaces of the conductive posts are exposed from the insulating resin and are used as first planar electrodes. In addition, a resist layer is formed on the opposite surface of the wiring layer. Exposed portions are formed in the resist layer to expose desired wiring portions of the wiring layer. These exposed portions are used as second planar electrodes. Stacking semiconductor devices of this construction enables an improvement in the integration of semiconductor integrated circuits.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention relates to a semiconductor device and to a method of fabricating the semiconductor device, and in particular, to the construction of a semiconductor device that can be three-dimensionally stacked and to a method of fabricating the semiconductor device.[0003]2. Description of the Related Art[0004]With the rapid development of Internet technology, prior-art constructions such as mainframes and terminals that are connected to mainframes have been replaced by systems made up by servers that are distributed throughout the world and the high-speed communication lines that connect them.[0005]This information communication network is now rapidly coming into popular use in households and by individuals through inexpensive and highly functional personal computers or mobile telephones that can be connected to the Internet, and as a result, the next-generation Internet protocol (IPv6) will allow connection of ...

AI Technical Summary

Benefits of technology

[0007]It is an object of the present invention to provide a novel semiconductor device and a method of fabricating the semiconductor device that can provide a solution to the above-described problems of the prior art, and in particular, that enables an improvement in integration through three-dimensional packaging.

[0020]The present invention thus can provide a stackable semiconductor device that lacks package material, thereby enabling a thin construction and a greater degree of freedom in design. The present invention therefore enables the realization of a high-capacity memory module or a System-in-Package.

Problems solved by technology

In actuality, however, the simultaneous formation of various function blocks requiring different forming processes on a silicon wafer is problematic both in terms of design as well as fabrication.

There is the additional problem that such LSI lacks flexibility when specifications are to be modified, such as when modifying the design or extending the functionality of each block.

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