Manufacturing methods for accurately aligned and self-balanced superjunction devices

Abstract

This invention discloses a method for manufacturing a semiconductor power device on a semiconductor substrate supporting a . drift region composed of an epitaxial layer. The method includes a first step of growing a first epitaxial layer followed by forming a first hard mask layer on top of the epitaxial layer; a second step of applying a first implant mask to open a plurality of implant windows and applying a second implant mask for blocking some of the implant windows to implant a plurality of dopant regions of alternating conductivity types adjacent to each other in the first epitaxial layer; and a third step of repeating the first step and the second step by applying the same first and second implant masks to form a plurality of epitaxial layers, each of which is implanted with the dopant regions of the alternating conductivity types. Then the manufacturing processes proceed by carrying out a device manufacturing process on a top side of the epitaxial layer on top of the dopant regions of the alternating conductivity types with a diffusion process to merge the dopant regions of the alternating conductivity types as doped columns in the epitaxial layers.

Description

[0001]This is a Divisional Patent Application and claim the Priority Date of a previously filed co-pending application Ser. No. 13 / 200,683 filed on Sep. 27, 2011 by common inventors of this Application. The disclosures of applications Ser. No. 13 / 200,683 are hereby incorporated by reference in this Patent Application.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The invention relates generally to the vertical semiconductor power devices. More particularly, this invention relates to configurations and methods with improved manufacturability for manufacturing vertical semiconductor power devices with a super-junction structure for high voltage applications.[0004]2. Description of the Prior Art[0005]Conventional manufacturing technologies and device configuration to further increase the breakdown voltage with reduced series resistance with a super-junction configuration are still confronted with difficulties and limitations of manufacturability. The practical applicat...

AI Technical Summary

Benefits of technology

This approach effectively reduces charge variations and improves the alignment of doped columns, enhancing the performance of super-junction devices by maintaining charge balance and reducing on-resistance, thus addressing the limitations of conventional methods.

Problems solved by technology

Conventional manufacturing technologies and device configuration to further increase the breakdown voltage with reduced series resistance with a super-junction configuration are still confronted with difficulties and limitations of manufacturability.

The practical applications and usefulness of the high voltage semiconductor power devices are limited due to the facts that the conventional high power devices manufactured with super-junction structural features now encounter difficulties to satisfy the more stringent processing windows.

However, the conventional techniques cannot achieve such requirements due to the variation of the N charge for doping the epitaxial layer.

The performance of the super-junction is adversary affected due to the uncontrollable variations of the N charge in the epitaxial layer cannot be further reduced.

However, the variations of charges between the P-doped regions and the N-doped regions in the super-junction structure are significantly beyond the device requirements as now used in the device for more modern applications.

The disclosures of Chen therefore cannot satisfy the more stringent device requirements as now imposed on such devices.

Such dopant variations, even with compensations as disclosed would still not be satisfactory to meet the requirements of current applications with more stringent design windows.

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